AP Memory Unveils Revolutionary ApSRAM™ for Low-Power IoT Solutions

On September 9, 2025, AP Memory, a prominent global player in customized memory solutions, announced a noteworthy advancement in memory technology: the launch of their next-generation PSRAM, named ApSRAM™. This cutting-edge memory solution is designed to optimize performance specifically for edge computing and Internet of Things (IoT) applications.

Groundbreaking Architecture and Enhanced Performance

ApSRAM™ marks a significant leap forward for AP Memory's existing pseudo-static random access memory (PSRAM) infrastructure. This new architecture has been crafted to provide an exceptional balance of low power consumption, rapid access times, and enhanced performance levels. With customer validation successfully completed, AP Memory plans to initiate mass production of ApSRAM™ by the end of this year, addressing the growing demands of modern technological applications.

Simplifying System Integration

One of the key highlights of ApSRAM™ is its user-friendly control interface, which streamlines the architecture by eliminating the need for complex signal calibration. This simplification not only enhances the usability of the product but also allows for higher bandwidth requirements, transforming how devices communicate and work together. By comparison, ApSRAM™ offers up to four times the bandwidth of traditional PSRAM while achieving a dramatic reduction in dynamic power consumption—down to one-fifth of conventional levels. Such performance makes it particularly appealing for power-sensitive devices, particularly wearables and real-time applications within edge computing contexts.

Expanding Memory Capacity

In terms of versatility, ApSRAM™ allows system-on-chips (SoCs) to increase their memory capacity seamlessly without necessitating a redesign. Capacity options will range between 128Mb and 2Gb, catering to a diverse array of application requirements. Complementing its flexible density options, ApSRAM™ supports input/output (I/O) voltages from 0.6V to 1.1V, promoting compatibility with a broad spectrum of logic processes. This characteristic makes the integration of ApSRAM™ with existing systems remarkably straightforward, offering a competitive edge in a crowded marketplace.

Ideal for the Future of Technology

Jerry Hsueh, Vice President of AP Memory, emphasized the endless possibilities for innovation when memory products push beyond standard boundaries. The ApSRAM™ initiative embodies this vision, positioning itself as an ideal solution for next-generation applications, including IoT devices, wearables, and edge computing frameworks. AP Memory remains dedicated to enhancing its capabilities through focused expertise in memory and packaging integration, thus ensuring that its offerings are not only high-performance but also low-power and competitively priced.

About AP Memory

AP Memory (TWSE 6531) is a leading fabless semiconductor company specializing in tailored memory design and integrated circuit (IC) solutions. Their product lineup includes IoT memory solutions (IoTRAM™), innovative AI memory options (VHMTM), and advanced silicon capacitors (S-SiCap™). Known for robust research and development capabilities, AP Memory is focused on providing high-performance and energy-efficient products suited for various applications ranging from mobile communication to high-performance computing.

For comprehensive details and insights into their groundbreaking offerings, visit www.apmemory.com.

By launching ApSRAM™, AP Memory sets a new standard in memory technology, paving the way for smarter and more efficient devices that are essential for our increasingly connected future.