DB HiTek Achieves Reliability Qualification for 1200V SiC MOSFET on 8-Inch Wafers
In the latest development from the semiconductor sector, DB HiTek, a leading South Korean foundry, announced the successful completion of a reliability qualification for its 1200V Silicon Carbide (SiC) MOSFET production process utilizing 8-inch (200 mm) wafers. This groundbreaking achievement signifies a major step forward in the company's efforts to expand its foothold in the SiC foundry market, with plans to initiate mass production in 2027.
The advancement in SiC technology is a game changer for power semiconductors, offering superior performance in high-temperature and high-voltage environments compared to traditional silicon. This makes it particularly suitable for electric vehicles (EVs), renewable energy systems, and industrial power equipment. Although six-inch wafers currently dominate the SiC market, industry leaders are transitioning to 8-inch wafers, as they promote higher manufacturing efficiency and cost competitiveness. In response, DB HiTek has developed a new 8-inch SiC wafer fabrication technology, enhancing its capabilities in foundry services.
With its optimized SiC MOSFET production processes, DB HiTek has achieved competitive electrical characteristics and high reliability standards. The company has established the first complete process for producing 1200V SiC wafers in the world, launching a foundry service platform that supports clients in design, production, electrical characterization, and reliability qualification.
To facilitate the commercial introduction of its 8-inch SiC chip production activities, DB HiTek is providing customers with Process Design Kits (PDK) for first and second generation 1200V SiC MOSFET manufacturing processes. The rollout of a third-generation PDK is scheduled for November this year. By utilizing these PDKs, clients can significantly reduce resource demands in early development phases, expedite prototype manufacturing, and shorten overall product development timelines by over a year.
The second-generation manufacturing process included in the PDK achieves a specific on-resistance (Rsp) of 2.5 mΩ•cm² or less and a threshold voltage (Vth) of 3V or higher, with the gate-to-source voltage on-state (Vgs(on)) set at 18V. This processing has successfully passed reliability qualification, an intensive stage in process development.
The upcoming third-generation process, which is currently undergoing qualification to achieve an Rsp of 2.3 mΩ•cm² or less with the same Vgs(on) value, is also expected to demonstrate a short-circuit withstand time (SCWT) of at least 2.5 μs in the safe operating area during a short circuit scenario. Once this qualification is complete, DB HiTek aims to make the third-generation PDK available to its customers.
DB HiTek plans to finalize the preparation of its manufacturing process and provide access to long-term customers in the third quarter of this year. Services are set to become available to all customers starting in the second quarter of 2027.
A company representative expressed, The completion of reliability qualification for our 1200V SiC MOSFET production process is significant as it establishes our technological capabilities and manufacturing framework necessary to deliver the worlds first 8-inch SiC foundry service. We will continue preparations for the 2027 mass production of SiC to solidify our market position and bolster our competitiveness in the new generation of power semiconductor foundries.
The advancement in SiC technology is a game changer for power semiconductors, offering superior performance in high-temperature and high-voltage environments compared to traditional silicon. This makes it particularly suitable for electric vehicles (EVs), renewable energy systems, and industrial power equipment. Although six-inch wafers currently dominate the SiC market, industry leaders are transitioning to 8-inch wafers, as they promote higher manufacturing efficiency and cost competitiveness. In response, DB HiTek has developed a new 8-inch SiC wafer fabrication technology, enhancing its capabilities in foundry services.
With its optimized SiC MOSFET production processes, DB HiTek has achieved competitive electrical characteristics and high reliability standards. The company has established the first complete process for producing 1200V SiC wafers in the world, launching a foundry service platform that supports clients in design, production, electrical characterization, and reliability qualification.
To facilitate the commercial introduction of its 8-inch SiC chip production activities, DB HiTek is providing customers with Process Design Kits (PDK) for first and second generation 1200V SiC MOSFET manufacturing processes. The rollout of a third-generation PDK is scheduled for November this year. By utilizing these PDKs, clients can significantly reduce resource demands in early development phases, expedite prototype manufacturing, and shorten overall product development timelines by over a year.
The second-generation manufacturing process included in the PDK achieves a specific on-resistance (Rsp) of 2.5 mΩ•cm² or less and a threshold voltage (Vth) of 3V or higher, with the gate-to-source voltage on-state (Vgs(on)) set at 18V. This processing has successfully passed reliability qualification, an intensive stage in process development.
The upcoming third-generation process, which is currently undergoing qualification to achieve an Rsp of 2.3 mΩ•cm² or less with the same Vgs(on) value, is also expected to demonstrate a short-circuit withstand time (SCWT) of at least 2.5 μs in the safe operating area during a short circuit scenario. Once this qualification is complete, DB HiTek aims to make the third-generation PDK available to its customers.
DB HiTek plans to finalize the preparation of its manufacturing process and provide access to long-term customers in the third quarter of this year. Services are set to become available to all customers starting in the second quarter of 2027.
A company representative expressed, The completion of reliability qualification for our 1200V SiC MOSFET production process is significant as it establishes our technological capabilities and manufacturing framework necessary to deliver the worlds first 8-inch SiC foundry service. We will continue preparations for the 2027 mass production of SiC to solidify our market position and bolster our competitiveness in the new generation of power semiconductor foundries.
Topics Consumer Technology）
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