#South Korea #Seoul #Semiconductor #SiC MOSFET #DB HiTek

DB HiTek Completes Reliability Qualification for SiC MOSFET Process

DB HiTek, a leading semiconductor foundry in South Korea known for its expertise in 8-inch wafers, has recently announced a major milestone in its operations. The company confirmed that it has successfully completed the reliability qualification for its 1,200 V silicon carbide (SiC) MOSFET process in 8-inch wafers (200 mm). This achievement marks a critical step toward expanding the company’s presence in the SiC wafer foundry market.

With a target to initiate mass production by 2027, DB HiTek is poised to support significant advancements in a variety of applications including electric vehicles (EVs), renewable energy systems, and industrial power equipment. SiC is gaining traction as a next-generation semiconductor material that outperforms traditional silicon (Si) in high temperature and high-voltage environments. Currently, the SiC market is dominated by 6-inch wafers, but leading semiconductor manufacturers are increasingly shifting towards 8-inch wafers to enhance production efficiency and cost-competitiveness.

In response to this market evolution, DB HiTek has developed advanced processing technologies for 8-inch SiC wafers, thereby broadening its foundry service capabilities. The company's innovations have led to enhanced power MOSFET characteristics and high reliability levels. Notably, DB HiTek has established the world’s first comprehensive SiC foundry process flow for 8-inch MOSFETs at 1,200 V.

To facilitate the commercial launch of its 8-inch SiC foundry services, DB HiTek is providing clients with first and second-generation Process Design Kits (PDKs) for its patented 1,200 V SiC MOSFET processes. A third-generation PDK is expected to be released in November, which aims to significantly reduce development times by over a year, enabling customers to utilize fewer resources at early development stages and accelerate prototype manufacturing.

The second-generation process has demonstrated specific on-resistance (Rsp) levels of 2.5 mΩ•cm² or less, with a threshold voltage (Vth) of 3 V or higher, and an active gate voltage (Vgs(on)) of 18 V. Following the completion of reliability qualification, critical parameters are set, encouraging clients to adopt these advances.

Meanwhile, the upcoming third-generation process is undergoing qualification tests aimed at achieving active state resistance levels of 2.3 mΩ•cm² or below under the same gate voltage conditions, alongside a short-circuit withstand time (SCWT) of at least 2.5 μs within the safe operating area for short-circuits (SCSOA). Upon successful qualification, DB HiTek plans to make the third-generation PDK accessible to its clients.

The company is also on track to finalize its process preparations and provide customary client access by the third quarter of this year. Availability is expected to broaden to all customers by the second quarter of 2027.

A spokesperson from DB HiTek stated, "The successful completion of reliability qualification for our 1,200 V SiC MOSFET process is significant, as it demonstrates our solidified core process technology and construction foundation necessary for offering the world’s first 8-inch SiC foundry service. We will continue preparing for volume production of 8-inch SiC products in 2027, aiming to strengthen our market position and competitiveness in the next-generation power semiconductor industry."