#South Korea #Seoul #Semiconductor #SiC MOSFET #DB HiTek

DB HiTek Completes Reliability Qualification for 1,200 V SiC MOSFET Process

DB HiTek, South Korea’s premier 8-inch foundry specializing in semiconductor technologies, has made headlines by successfully completing the reliability qualification for its 1,200 V silicon carbide (SiC) MOSFET process. This achievement is pivotal as it signifies the company’s commitment to expanding its offerings within the dynamic semiconductor market, particularly in the realm of 8-inch wafer technology. The company is ambitiously targeting volume production by 2027, aiming to cater to the increasing demand for advanced semiconductors in various applications, including electric vehicles (EVs), renewable energy systems, and industrial power devices.

Silicon carbide is lauded for its exceptional performance in high-temperature and high-voltage environments, outperforming traditional silicon materials. As the semiconductor industry evolves, a notable shift is occurring from 6-inch wafers to 8-inch wafers in order to enhance production efficiency and reduce costs. Recognizing this trend, DB HiTek has advanced its capabilities by developing 8-inch SiC process technologies and establishing a comprehensive foundry service infrastructure.

One of the key highlights of DB HiTek’s latest development is the establishment of the world's first complete 1,200 V 8-inch SiC foundry process flow. This innovative foundry service platform is strategically designed to support clients across various stages, including design, manufacturing, electrical characterization, and reliability testing. This holistic approach enhances collaboration and efficiency, simplifying the process for clients engaged in semiconductor development.

In addition to the process flow, DB HiTek is introducing Process Design Kits (PDKs) that will provide clients with the resources necessary for the efficient rollout of their projects. The first and second generations of these PDKs will enable faster prototyping and reduced resource requirements during early development stages. A third-generation PDK is also anticipated to be launched in November, further streamlining product development and expected to shorten the timeline by more than a year.

The company’s second-generation PDK already exemplifies high performance, achieving a specific on-resistance of 2.5 mΩ•cm² or less, alongside a threshold voltage exceeding 3 V at a gate voltage of 18 V. This confirmation of reliability showcases DB HiTek’s dedication to providing top-notch semiconductor solutions.

Looking forward, the third-generation PDK is set to push the envelope further. It aims for a specific on-resistance of 2.3 mΩ•cm² or less while ensuring a short-circuit withstand time of at least 2.5 μs in safe operating conditions. This rigorous qualification process will ensure that DB HiTek can consistently meet the evolving demands of their clientele.

The anticipation surrounding the commercial rollout of DB HiTek's 8-inch SiC foundry capacity is considerable. The plan is to finalize process preparations and extend access to existing clients by the third quarter of this year, with broader service availability expected to take off in the second quarter of 2027. A representative from DB HiTek emphasized the significance of this milestone, stating, “The completion of reliability qualification for our 1,200 V SiC MOSFET process is a pivotal achievement that underlines our technological and manufacturing capabilities in delivering the world’s first 8-inch SiC foundry service.”

As DB HiTek gears up for mass production of its groundbreaking SiC MOSFET technology in 2027, the company is not only positioning itself for success in a rapidly evolving landscape but also reinforcing its competitiveness within the next-generation power semiconductor sector. The impending shift to 8-inch wafers is set to redefine the industry, and DB HiTek is poised at the forefront of this transformation.