DB HiTek Completes Reliability Qualification for 1200V SiC MOSFET Technology

DB HiTek Completes Reliability Qualification for 1200V SiC MOSFET Process

On September 9, 2026, DB HiTek, a leading foundry in South Korea specializing in 8-inch wafers, proudly announced the successful completion of reliability qualification for its 1200V Silicon Carbide (SiC) MOSFET process. This milestone marks a significant step forward in the company's expansion into the 8-inch SiC foundry service market, with series production slated for 2027.

The innovative SiC material offers superior performance over traditional silicon, especially in high-temperature and high-voltage settings, making it ideal for applications in electric vehicles (EVs), renewable energy systems, and industrial power electronics. Currently, the SiC market is largely dominated by 6-inch wafers, however, major semiconductor manufacturers are transitioning to 8-inch wafers to improve production efficiency and competitiveness.

In response to this industry shift, DB HiTek has developed advanced 8-inch SiC process technology and expanded its foundry service capabilities. By optimizing its high-performance SiC MOSFET process, the company has achieved competitive electrical properties and high reliability levels. Furthermore, it has established the world's first complete 1200V 8-inch SiC foundry process flow, creating a robust service platform to assist customers with design, manufacturing, electrical characterization, and reliability qualification.

To support the commercial rollout of its 8-inch SiC foundry services, DB HiTek is offering its customers Process Design Kits (PDKs) for its proprietary 1200V SiC MOSFET processes. The first and second generation PDKs are currently available, with a third-generation kit expected to launch in November 2026. These PDKs significantly reduce the resource requirements in the early development phases, expedite prototype manufacturing, and shorten product development timelines by more than a year.

The second-generation PDK features a specific on-resistance (Rsp) of less than 2.5 mΩ•cm² and a threshold voltage (Vth) of 3 V or higher at an on-state gate voltage (Vgs(on)) of 18 V. It has successfully passed the reliability qualification, a demanding phase of process development. On the other hand, the third-generation process, currently undergoing qualification, aims to achieve a specific on-resistance of 2.3 mΩ•cm² or less at the same on-state gate voltage, alongside a short-circuit withstand time (SCWT) of at least 2.5 µs in the short-circuit safe operating area (SCSOA).

Once the qualification is complete, DB HiTek plans to make the third-generation PDK available to its customers. The process preparations are expected to finish in the third quarter of this year, providing long-time customers with early access. Beginning in the second quarter of 2027, DB HiTek intends to offer this service to a broader customer base, further solidifying its footprint in the 8-inch SiC foundry market.

According to a representative of DB HiTek, "Completing the reliability qualification for our 1200V SiC MOSFET process is crucial as it demonstrates that we have secured the core process technology and manufacturing foundation necessary to provide the world's first 8-inch SiC foundry service. We will continue preparations for series production of the 8-inch SiC by 2027 with the goal of establishing ourselves in the market and enhancing our competitiveness in next-generation power semiconductor foundry services."