#United States #Albany #Power Electronics #NoMIS Power #SiC MOSFET

NoMIS Power Launches 3.3 kV SiC MOSFET Lineup

NoMIS Power Corporation has made a significant advancement in the world of power electronics with its introduction of the N3PT080MP330, a 3.3 kV silicon carbide (SiC) MOSFET. This innovative device, featuring an on-resistance of only 80 mΩ at 34 A, marks NoMIS Power's foray into medium-voltage applications, which are increasingly important in today's energy landscape.

Extending the Range of SiC Technology

The N3PT080MP330 is a testament to NoMIS’ pioneering work with SiC technology. As the demand for more efficient and reliable power conversion solutions grows, this new MOSFET provides an outstanding alternative to legacy silicon-based solutions. This technology allows users to benefit from:

• - Lower switching losses that help improve overall energy efficiency.
• - Higher power density, making it suitable for compact designs.
• - Superior thermal performance, which is critical in high-performance applications.
• - Enhanced durability compared to silicon IGBTs, especially at elevated voltages.

The N3PT080MP330 is targeted towards multiple applications, including battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives, among others. Its robust design not only supports high-power environments but also ensures reliable operation over extended periods.

Performance Advantages

One of the standout features of the N3PT080MP330 is its low and stable conduction and switching losses even at elevated temperatures (up to 175°C). In comparison, traditional silicon IGBTs often experience a doubling of switching losses as temperatures rise. This characteristic makes the SiC MOSFET a superior choice for thermal management in demanding environments.

Additionally, the device allows for gate drive flexibility with operational ratings at both +18 V and +20 V. This design adaptability facilitates easy integration into existing systems without the need for separate anti-parallel diodes, which can streamline production processes.

Future Expansion of Product Line

In line with its commitment to innovation, NoMIS plans to expand its 3.3 kV SiC MOSFET lineup later this year with the release of additional devices featuring lower on-resistance: a 50 mΩ device rated at 55 A, followed by a 25 mΩ device rated at 109 A in 2026. Such advancements promise to drive even greater efficiency and performance in the medium-voltage sector.

Applications and Market Impact

The implications of this technology extend far beyond traditional applications. For instance, in the energy and infrastructure sector, these MOSFETs are ideal for high-power solar inverters and DC solid-state circuit breakers (SSCBs), which enhance both efficiency and resilience in medium- and high-voltage networks. In transportation, their application in heavy-duty electric vehicles and railway traction systems showcases their versatility.

Simultaneously, these devices facilitate the development of ultra-fast EV charging stations, pushing the boundaries of what is achievable in electric mobility. Additionally, industrial sectors can benefit from this technology through improved power conditioning and processing control in large motor drives, offering both reliability and high performance.

Manufacturing Readiness

The introduction of this new MOSFET continues to build on NoMIS Power's established 1.2 kV planar SiC technology, ensuring a smooth transition to 3.3 kV solutions without a dip in performance or manufacturability. This scalable roadmap positions NoMIS Power as a frontrunner in the semiconductor industry, fostering a more competitive environment for medium-voltage power conversion components.

Showcase at ICSCRM 2025

NoMIS Power is set to officially unveil the N3PT080MP330 at the upcoming International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) in Busan, South Korea, scheduled from September 14-19, 2025. This platform offers an opportunity for stakeholders in the industry to engage directly with NoMIS and gain insights into the performance benefits of this new MOSFET, along with exploration of customization options for various applications.

Conclusion

With the launch of the N3PT080MP330 SiC MOSFET, NoMIS Power is not just expanding its product range but is also actively participating in shaping the future of power conversion technologies. This device promises to bridge the gap between conventional solutions and advanced semiconductor technology, leading the charge toward a more efficient and reliable power landscape.