#South Korea #Seoul #Semiconductor #Gan HEMT #DBHiTek

DB HiTek Gears Up for 650V GaN HEMT Technology Delivery

Seoul, South Korea, September 11, 2025 — DB HiTek, a leading manufacturer of 8-inch semiconductor wafers, has announced its progress in developing high electron mobility transistors (HEMT) based on gallium nitride (GaN) technology. With an operating voltage of 650V in E-mode, these next-generation power semiconductor wafers are set for customer delivery by the end of the month. The company is also launching a specialized program for multi-project wafer (MPW) production utilizing GaN.

Compared to traditional silicon-based power modules, GaN semiconductors demonstrate superior performance in high-voltage, high-frequency, and high-temperature environments, offering outstanding energy efficiency. The 650V GaN HEMT products feature high switching speed and operational stability, making them suitable for various applications including electric vehicle charging infrastructure, energy conversion systems in hyperscale data centers, and cutting-edge 5G network equipment.

In 2022, as the complex semiconductor market began to take shape, DB HiTek identified GaN and silicon carbide (SiC) as key growth factors and accordingly invested significantly in the development of their manufacturing processes. A spokesperson from DB HiTek stated, “The company has already established a global reputation for leadership in silicon-based power semiconductor technologies, including the development of the industry’s first BCDMOS circuit with a channel length of 0.18 micrometers. Adding GaN capabilities is projected to enhance our competitive edge with a broader array of technologies.”

Upon completing the 650V GaN HEMT development, DB HiTek plans to initiate production on 200V and 650V GaN tailored for integration into chips by the end of 2026. Looking ahead, the company aims to adapt its GaN platform for a wider voltage range based on market demands and customer needs.

To support these initiatives, DB HiTek is expanding its clean manufacturing facilities at its Fab2 plant located in Chungcheongbuk-do, South Korea. This expansion is expected to boost production capacity to approximately 35,000 8-inch wafers per month, serving as a foundation for GaN, BCDMOS, and SiC technologies. Once the expansion is complete, overall wafer production will increase by 23%, rising from 154,000 to 190,000 units monthly.

Meanwhile, DB HiTek will showcase its advancements in SiC technology along with its GaN and BCDMOS innovations at the 2025 International Conference on Silicon Carbide and Related Materials (ICSCRM). This significant industry forum is set to take place from September 15 to 18 at the BEXCO International Exhibition Conference Center in Busan. Here, DB HiTek will engage directly with customers and industry leaders, demonstrating its latest developments.