DB HiTek Achieves Reliability Qualification for 1200V SiC MOSFET Process
DB HiTek, a leading South Korean semiconductor foundry specializing in 8-inch wafers, has announced a significant milestone in its technological journey. The company has successfully completed the reliability qualification for its 1200V silicon carbide (SiC) MOSFET process. This achievement marks a pivotal step in DB HiTek's commitment to expanding its service offerings in the SiC foundry market, with plans for mass production slated to commence in 2027.
Silicon carbide is emerging as a next-generation semiconductor material that enhances performance in power electronics applications. With superior characteristics at high temperatures and voltages compared to traditional silicon, SiC is ideal for use in electric vehicles, renewable energy systems, and industrial power electronics. While the market currently leans towards 6-inch wafers, major semiconductor manufacturers are transitioning to 8-inch models to enhance production efficiency and cost competitiveness. DB HiTek's response to this market trend has been the development of its SiC process technology tailored for 8-inch wafers, along with expanding its foundry capabilities.
This recent qualification achievement positions DB HiTek at the forefront of the semiconductor industry by providing competitive electrical characteristics and high reliability levels through the optimization of its high-power SiC MOSFET process. They have developed the world's first complete technological flow for producing 8-inch 1200V SiC MOSFETs, facilitating a comprehensive support platform for clients at every stage—from design and production to electrical characterization and reliability qualification.
To support commercial adoption of its 8-inch SiC MOSFET business, DB HiTek offers clients Process Design Kit (PDK) packages for its SiC MOSFET 1200V technologies in both first and second generations, with a third-generation kit set to be released in November. These PDKs enable customers to minimize the resources required during the initial development phase, expedited prototype fabrication, and reduce product development time by more than a year.
The second-generation PDK achieves a specific on-resistance (Rsp) of 2.5 mΩ•cm² or lower, with a threshold voltage (Vth) of at least 3V at an on-gate to source voltage (Vgs(on)) of 18V. This process has passed the stringent reliability qualification stage necessary for technology development. Meanwhile, the third-generation process, currently undergoing qualification, aims for an on-resistance of 2.3 mΩ•cm² or lower while maintaining the same Vgs(on) of 18V and a short-circuit withstand time (SCWT) of at least 2.5 μs in the safe operating area during short circuit events. Once qualified, DB HiTek plans to release the third-generation PDK to customers.
The company intends to conclude process preparations and provide the service to existing clients by the third quarter of this year, with plans to extend this offering to all clients from the second quarter of 2027.
A representative from DB HiTek expressed the significance of this milestone, stating, "The completion of our 1200V SiC MOSFET process reliability qualification is crucial, as it showcases our key process technology and the production support needed to be the world's first foundry service provider for 8-inch SiC devices. We will continue our preparations for the launch of mass production in 2027, aiming to solidify our market position and enhance competitiveness in the new-generation power semiconductor foundry sector."
Silicon carbide is emerging as a next-generation semiconductor material that enhances performance in power electronics applications. With superior characteristics at high temperatures and voltages compared to traditional silicon, SiC is ideal for use in electric vehicles, renewable energy systems, and industrial power electronics. While the market currently leans towards 6-inch wafers, major semiconductor manufacturers are transitioning to 8-inch models to enhance production efficiency and cost competitiveness. DB HiTek's response to this market trend has been the development of its SiC process technology tailored for 8-inch wafers, along with expanding its foundry capabilities.
This recent qualification achievement positions DB HiTek at the forefront of the semiconductor industry by providing competitive electrical characteristics and high reliability levels through the optimization of its high-power SiC MOSFET process. They have developed the world's first complete technological flow for producing 8-inch 1200V SiC MOSFETs, facilitating a comprehensive support platform for clients at every stage—from design and production to electrical characterization and reliability qualification.
To support commercial adoption of its 8-inch SiC MOSFET business, DB HiTek offers clients Process Design Kit (PDK) packages for its SiC MOSFET 1200V technologies in both first and second generations, with a third-generation kit set to be released in November. These PDKs enable customers to minimize the resources required during the initial development phase, expedited prototype fabrication, and reduce product development time by more than a year.
The second-generation PDK achieves a specific on-resistance (Rsp) of 2.5 mΩ•cm² or lower, with a threshold voltage (Vth) of at least 3V at an on-gate to source voltage (Vgs(on)) of 18V. This process has passed the stringent reliability qualification stage necessary for technology development. Meanwhile, the third-generation process, currently undergoing qualification, aims for an on-resistance of 2.3 mΩ•cm² or lower while maintaining the same Vgs(on) of 18V and a short-circuit withstand time (SCWT) of at least 2.5 μs in the safe operating area during short circuit events. Once qualified, DB HiTek plans to release the third-generation PDK to customers.
The company intends to conclude process preparations and provide the service to existing clients by the third quarter of this year, with plans to extend this offering to all clients from the second quarter of 2027.
A representative from DB HiTek expressed the significance of this milestone, stating, "The completion of our 1200V SiC MOSFET process reliability qualification is crucial, as it showcases our key process technology and the production support needed to be the world's first foundry service provider for 8-inch SiC devices. We will continue our preparations for the launch of mass production in 2027, aiming to solidify our market position and enhance competitiveness in the new-generation power semiconductor foundry sector."
Topics Consumer Technology）
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