DB HiTek Successfully Completes Reliability Testing for 1200V SiC MOSFET Production
DB HiTek, a leading specialized semiconductor manufacturer based in South Korea, has recently announced the successful completion of reliability testing for its revolutionary 1200V Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology. This achievement represents a critical step in the company's expansion into the market for 8-inch SiC semiconductors, with plans to ramp up production by 2027.
Innovative Manufacturing Process
SiC is a next-generation semiconductor material known for its superior performance compared to conventional silicon in high-temperature and high-voltage applications. This makes SiC particularly suitable for electric vehicles (EVs), renewable energy systems, and industrial power equipment. While the 6-inch wafer market has traditionally dominated, leading semiconductor manufacturers are now shifting towards 8-inch wafers to enhance production efficiency and reduce costs. In response to this trend, DB HiTek has developed a new manufacturing technology for 8-inch SiC wafers, establishing its proprietary semiconductor service offerings.
Through optimization of its SiC MOSFET manufacturing process, DB HiTek has achieved competitive electrical characteristics coupled with high reliability. The company has pioneered the world's first fully functional technology process for producing 8-inch SiC wafers at 1200V. This has enabled DB HiTek to create a comprehensive manufacturing support platform that assists customers in design, production, electrical characterization, and reliability qualification.
Design Kit and Future Plans
To facilitate commercial deployment of its 8-inch SiC wafer manufacturing, DB HiTek offers its clients Design Kits (PDKs) for its patented first- and second-generation 1200V MOSFET production processes. The third-generation PDK is set to launch in November 2026, allowing clients to streamline resources during the early design phases, accelerate prototype fabrication, and reduce overall product development time by over a year.
The second-generation process covered by the PDK boasts a specific resistance (Rsp) of 2.5 mΩ·cm² or less and a threshold voltage (Vth) of 3V or higher at a gate-to-source voltage (Vgs(on)) of 18V. It has also successfully undergone reliability qualification, a challenging phase in process development. Currently, the third-generation process is undergoing reliability tests with a goal of achieving a specific resistance of 2.3 mΩ·cm², while maintaining the same gate voltage of 18V and ensuring a safe short circuit withstand time (SCWT) of no less than 2.5 µs in the safe operating area under short circuit conditions (SCSOA).
Once the reliability qualifications are achieved, DB HiTek plans to make the third-generation PDK available to clients. The company aims to finalize the process and ensure availability to existing clients by Q3 of this year, with a broader rollout planned for all customers starting in Q2 2027.
According to a representative from DB HiTek, “Completing the reliability testing for our 1200V SiC MOSFET production process is crucial as it demonstrates that we have established the core technology and manufacturing foundation necessary to provide the world’s first service for 8-inch SiC semiconductors. We will continue to prepare for mass production of 8-inch SiC wafers in 2027 to solidify our market position and reinforce our competitiveness in the next-generation power semiconductor sector.”
Innovative Manufacturing Process
SiC is a next-generation semiconductor material known for its superior performance compared to conventional silicon in high-temperature and high-voltage applications. This makes SiC particularly suitable for electric vehicles (EVs), renewable energy systems, and industrial power equipment. While the 6-inch wafer market has traditionally dominated, leading semiconductor manufacturers are now shifting towards 8-inch wafers to enhance production efficiency and reduce costs. In response to this trend, DB HiTek has developed a new manufacturing technology for 8-inch SiC wafers, establishing its proprietary semiconductor service offerings.
Through optimization of its SiC MOSFET manufacturing process, DB HiTek has achieved competitive electrical characteristics coupled with high reliability. The company has pioneered the world's first fully functional technology process for producing 8-inch SiC wafers at 1200V. This has enabled DB HiTek to create a comprehensive manufacturing support platform that assists customers in design, production, electrical characterization, and reliability qualification.
Design Kit and Future Plans
To facilitate commercial deployment of its 8-inch SiC wafer manufacturing, DB HiTek offers its clients Design Kits (PDKs) for its patented first- and second-generation 1200V MOSFET production processes. The third-generation PDK is set to launch in November 2026, allowing clients to streamline resources during the early design phases, accelerate prototype fabrication, and reduce overall product development time by over a year.
The second-generation process covered by the PDK boasts a specific resistance (Rsp) of 2.5 mΩ·cm² or less and a threshold voltage (Vth) of 3V or higher at a gate-to-source voltage (Vgs(on)) of 18V. It has also successfully undergone reliability qualification, a challenging phase in process development. Currently, the third-generation process is undergoing reliability tests with a goal of achieving a specific resistance of 2.3 mΩ·cm², while maintaining the same gate voltage of 18V and ensuring a safe short circuit withstand time (SCWT) of no less than 2.5 µs in the safe operating area under short circuit conditions (SCSOA).
Once the reliability qualifications are achieved, DB HiTek plans to make the third-generation PDK available to clients. The company aims to finalize the process and ensure availability to existing clients by Q3 of this year, with a broader rollout planned for all customers starting in Q2 2027.
According to a representative from DB HiTek, “Completing the reliability testing for our 1200V SiC MOSFET production process is crucial as it demonstrates that we have established the core technology and manufacturing foundation necessary to provide the world’s first service for 8-inch SiC semiconductors. We will continue to prepare for mass production of 8-inch SiC wafers in 2027 to solidify our market position and reinforce our competitiveness in the next-generation power semiconductor sector.”
Topics Consumer Technology）
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