#South Korea #semiconductor technology #DB HiTek #Gan HEMT #North Chungcheong

DB HiTek's Innovative Leap into Semiconductor Technology

Introduction

DB HiTek, a prominent player in the semiconductor foundry space, has recently announced significant strides in the development of its latest E-Mode GaN HEMT (High Electron Mobility Transistor) technology, specifically focusing on the 650V platform. This advancement is not just crucial for the company itself but heralds a new era in semiconductor efficiency and performance that could transform several key industries, including electric vehicles (EVs), energy conversion for data centers, and next-generation 5G networks.

Breakthrough Technology

The GaN technology developed by DB HiTek promises superior performance compared to traditional silicon-based power devices. High voltage, high-frequency, and high-temperature operations characterize GaN semiconductors, making them particularly effective in applications where efficiency is paramount. The E-Mode GaN HEMT 650V technology is noted for its rapid switching capabilities and robust operational stability, ideal for the charging infrastructure of electric vehicles and large-scale data center energy conversion systems.

In a statement, a DB HiTek representative highlighted the foresight the company had shown when it invested early in GaN and SiC (Silicon Carbide) technologies. This strategic decision positions DB HiTek to take full advantage of the surging demand for efficient power electronics, which is expected to skyrocket as industries increasingly focus on sustainability and energy efficiency.

Roadmap for Future Developments

DB HiTek plans to release a dedicated GaN multi-project wafer (MPW) program by the end of October, further enabling customers to leverage these advanced technologies. Additionally, the company is set to roll out a 200V GaN process and an optimized 650V GaN solution for chip integration by the end of 2026. This roadmap reflects DB HiTek's commitment to expanding its GaN platform across a broader voltage spectrum to meet diverse market needs and customer requirements.

Expansion of Manufacturing Capabilities

To support these exciting developments, DB HiTek is also expanding its Fab2 cleanroom facilities located in North Chungcheong, South Korea. This expansion aims to enhance the company's manufacturing capacity by approximately 35,000 8-inch wafers per month, accommodating the growing demand for GaN, BCDMOS (Bipolar CMOS), and SiC production processes. Upon completion, DB HiTek's total monthly production capacity will increase by 23%, from 154,000 to 190,000 wafers, reflecting a robust commitment to scaling semiconductor manufacturing to meet industry demands.

Industry Engagement

In line with its technological advancements, DB HiTek will participate in the 2025 International Conference on Silicon Carbide and Related Materials (ICSCRM) from September 15-18 at BEXCO in Busan. This conference will provide a global platform for DB HiTek to showcase its innovations, including progress in SiC process development and its own GaN and BCDMOS technologies. It will also facilitate direct engagement with customers and industry leaders, fostering collaborative efforts toward advancing semiconductor technology.

Conclusion

As DB HiTek continues to innovate and expand its semiconductor technology capabilities, its focus on GaN HEMT technology will likely position it at the forefront of the semiconductor industry. Gains in efficiency, energy performance, and product versatility are set to revolutionize applications ranging from electric vehicle charging to advanced networking solutions. The industry eagerly awaits the outcomes of DB HiTek's latest pursuits, promising a technological renaissance that prioritizes sustainability and power efficiency.