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NEO Semiconductor's Revolutionary 3D X-DRAM Technology

NEO Semiconductor, a frontrunner in advanced memory technology, has made a significant breakthrough in its 3D X-DRAM product line by unveiling the industry’s first 1T1C and 3T0C-based 3D X-DRAM cells. Set to redefine memory capabilities, this development promises remarkable density and enhanced power efficiency, catering specifically to the demands of modern applications such as AI and advanced in-memory computing.

Key Innovations in 3D X-DRAM Technology

The newly introduced 1T1C (one transistor, one capacitor) and 3T0C (three transistors, zero capacitors) memory designs are engineered to deliver extraordinary performance metrics. These technologies achieve an impressive density of up to 512 Gb while maintaining ultra-low power consumption. Additionally, the data retention capabilities have seen a substantial enhancement, with retention times extending over 450 seconds.

Beneficial Features

1. Enhanced Retention & Efficiency: Leveraging IGZO (Indium Gallium Zinc Oxide) channel technology, the new cells show outstanding retention times that mitigate the need for frequent refresh cycles, thereby significantly reducing power consumption.
2. Fast Operations: According to TCAD simulations, both 1T1C and 3T0C configurations exhibit rapid read and write speeds of approximately 10 nanoseconds.
3. Manufacturing Flexibility: Designed using a modified process similar to that of 3D NAND, these new memory cells allow for quick integration into existing manufacturing infrastructures, streamlining production processes while maximizing yield.
4. High Performance in AI Applications: The memory units are set to address the needs of AI and edge computing, ensuring quick access to data with reduced energy requirements.

The Future of 3D X-DRAM

NEO Semiconductor is not stopping here. The company has expanded its 3D X-DRAM product family to include three distinct variants:

• - 1T1C: Optimal for high-density DRAM applications, fully aligned with existing DRAM and HBM (High Bandwidth Memory) roadmaps.
• - 3T0C: Tailored specifically for current-sensing operations; ideal for high-demand AI and in-memory computing scenarios.
• - 1T0C: A highly versatile cell structure ideal for applications requiring hybrid memory and logic architectures.

Next Steps

The innovative technology is set to be showcased at the upcoming 17th IEEE International Memory Workshop, scheduled for May 18th-21st, 2025, in Monterey, California. Meetings for further discussions on this technology will be available for interested parties.

About NEO Semiconductor

Founded in 2012 by Andy Hsu, NEO Semiconductor has steadily advanced as a leader in the memory technology space, holding over thirty U.S. patents. With a portfolio that includes pioneering developments in 3D NAND flash and 3D DRAM technologies, NEO continues to push the boundaries of what’s possible in the semiconductor industry. The introduction of X-NAND™ products and the world's most efficient X-DRAM™ architecture highlight the company's commitment to innovation and performance optimization.

For more information on NEO Semiconductor’s latest advancements, please visit their official website at https://neosemic.com.