#Japan #Chiyoda #CMC Research #GaN Technology #SiC Power Devices

Upcoming Webinar on SiC/GaN Power Devices

CMC Research, renowned for providing industry-leading materials and chemical market insights, is hosting an informative webinar titled "Technology Trends and Challenges of SiC/GaN Power Devices for Next-Gen Automotive and Data Center Power Enhancement". This live session is scheduled for August 28, 2025, from 10:30 AM to 4:30 PM and will be conducted via Zoom.

Who is the Instructor?

The webinar will feature Nobuyuki Iwamura, Professor of Physics and Engineering at Tsukuba University, as the keynote speaker. With extensive experience in power semiconductor research and development, Professor Iwamura’s expertise will provide attendees with invaluable insights into the current state and future potential of SiC and GaN power devices.

Registration Details

Participants can register for the webinar through the CMC Research website. The fee is set at 55,000 JPY (tax included) for general attendees, 49,500 JPY for newsletter subscribers, and 26,400 JPY for academic registrants. All prices include materials.

What Will You Learn?

Attendees can expect to gain a comprehensive understanding of the following topics:

• - The application of power devices in data center supplies and xEV (electric vehicles).
• - Latest technological advancements in power devices.
• - Cutting-edge materials such as Si, SiC, and GaN, along with their implementation techniques.
• - Design-specific considerations for Si and SiC devices.
• - Insights into process technologies.

Who Should Attend?

This seminar is targeted at:

• - Professionals in power electronics development.
• - Developers of power devices.
• - Sales representatives for power electronics equipment.
• - Sales personnel focused on power devices.

Seminar Agenda Highlights

1. Introduction to Power Electronics
- Overview of power electronics and the role of power devices.
- Types and basic structures of power devices.
- Applications of power devices in various fields.
- Benefits of high-frequency operation.
- Key points for developing power devices.

2. Advancements and Challenges in Silicon Power Devices
- Key points in the development of MOSFETs and IGBTs.
- Ongoing challenges in enhancing characteristics.
- Technologies supporting improvements in MOSFETs and IGBTs.
- Recent trends in MOSFET and IGBT advancements.
- New structure IGBTs: Reverse conducting IGBTs (RC-IGBT).

3. Current Status and Challenges of SiC Power Devices
- Understanding wide-bandgap semiconductors.
- Advantages of SiC over silicon.
- SiC MOSFET processes.
- Key points for expanding the adoption of SiC devices.
- Advancements in SiC MOSFET characteristics and reliability.

4. Current Status and Challenges of GaN Power Devices
- The prevalent structure of GaN devices: Lateral GaN on Si.
- Characteristics and challenges of GaN-HEMT devices.
- The transition to normally-off GaN devices.
- Strengths and weaknesses of GaN power devices.
- Latest trends in vertical GaN devices.

5. High-Temperature Compatible Implementation Technologies
- Advantages of operating at high temperatures.
- Packages for SiC MOSFET modules.
- The increasing importance of SiC MOSFET module development.

Conclusion

This seminar presents a unique opportunity to better understand the leading-edge advancements in power device technology, essential for the electrification of vehicles and the efficiency enhancement of data center power supplies. With significant strides being made towards automotive electrification and the high efficiency required in data centers, the role of high-performance power devices has never been more critical. Join us to discuss the potential and challenges ahead, along with insights from industry experts!

Note: The webinar will be conducted on Zoom. To ensure a smooth experience, please refer to the recommended technical environment on the platform. A viewing URL will be sent via email once registration is complete. Recording or photography during the session is strictly prohibited.