#United States #Lam Research #Fremont, California #ALTUS #Molybdenum

Introduction

Lam Research Corporation has made a significant stride in the semiconductor industry with the launch of its latest innovation, the ALTUS® Halo. This advanced atomic layer deposition (ALD) tool is a pioneering solution specifically designed to utilize molybdenum, a metal known for its low resistivity and efficiency in semiconductor manufacturing.

The Need for Innovation in Semiconductor Metallization

As technology continues to advance, the demand for more efficient, high-performance semiconductors grows. Traditional metals like tungsten have served well but have limitations that hinder further scaling of devices. As applications such as artificial intelligence and cloud computing demand more from semiconductor technologies, the transition towards novel materials is essential. Molybdenum presents a viable solution due to its superior properties, which enable better conductivity and reduced processing steps.

ALTUS Halo: A Game Changer

With the introduction of ALTUS Halo, Lam Research aims to transform the landscape of semiconductor metallization. Leveraging patented innovations, this ALD tool achieves an unprecedented level of precision by depositing molybdenum in a way that guarantees void-free fills and low resistivity. This capability is crucial for developing advanced semiconductor devices, including state-of-the-art NAND and DRAM chips.

Sesha Varadarajan, senior vice president at Lam Research, emphasizes the significance of this tool, stating, “ALTUS Halo represents the most important breakthrough in atomic layer deposition in over two decades.” This tool allows manufacturers to adopt low-resistivity molybdenum in high-volume production processes, facilitating the next generation of semiconductor scaling efforts.

Performance Enhancement Through Molybdenum

As semiconductors require swift electrical signals to function efficiently, the properties of the wiring materials used are critical. Molybdenum, having lower resistivity than tungsten, allows for quicker signal transmission, which is vital in complex architectures like 3D NAND and advanced logic designs. Moreover, the use of molybdenum eliminates the need for additional barrier layers, streamlining the manufacturing process and enhancing overall efficiency.

According to industry experts, implementations of ALTUS Halo have observed over a 50% improvement in resistance compared to conventional tungsten processes. This signifies a substantial leap forward in supporting high-performance applications in the semiconductor field.

Current Adoption and Future Prospects

The adoption of ALTUS Halo has already commenced among leading high-volume chip manufacturers, especially within the 3D NAND production facilities situated in Korea and Singapore. Micron Technology, a frontrunner in the NAND market, has expressed excitement about integrating molybdenum metallization using ALTUS Halo to enhance its I/O bandwidth and storage capabilities.

Mark Kiehlbauch, corporate vice president of NAND development at Micron, remarked, “Lam's ALTUS Halo tool has made it possible for Micron to bring molybdenum into mass production.” This sentiment reflects the industry-wide anticipation of the impact of ALTUS Halo on future chip designs and manufacturing.

Conclusion

In conclusion, the launch of ALTUS® Halo by Lam Research signifies a pivotal moment in the semiconductor industry. By addressing the limitations of existing materials and processes, this innovative ALD tool not only opens new avenues for chip scaling but also positions Lam Research as a leader in the transition toward next-generation semiconductor technologies. As the industry continues to evolve, ALTUS Halo stands at the forefront, ready to meet the demands of tomorrow’s advanced applications.