#United States #Munich #Infineon Technologies #GaN Technology #Innoscience

Infineon Technologies Triumphs in Patent Infringement Case Against Innoscience

In a significant victory for Infineon Technologies AG, the U.S. International Trade Commission (ITC) ruled in favor of the semiconductor giant in a patent infringement case against its competitor, Innoscience. This decision, which confirmed the violation of one of Infineon's patents related to gallium nitride (GaN) technology, highlights the strength and value of Infineon's extensive intellectual property portfolio.

Background of the Case

The ongoing legal battle centers on claims that Innoscience utilized Infineon's patented GaN technologies without authorization. The ITC's preliminary ruling acknowledged the validity of both patents asserted by Infineon, indicating a solid foundation for the company's claims. Following this decision, the final determination from the ITC is anticipated on April 2, 2026. Should this preliminary ruling be upheld, it could result in an import ban on Innoscience's infringing products entering the United States market.

According to Dr. Johannes Schoiswohl, Senior Vice President and Head of Infineon's GaN Systems Business Line, this ruling reinforces the commitment of Infineon to safeguard its patents and ensure fairness in the industry. "This ruling is a testament to the strength of Infineon's intellectual property, confirming our dedication to defending our patent portfolio vigorously," he stated, adding that the advancements in semiconductor technology, from decarbonization efforts to digital transformation, are essential commitments for the company.

The Importance of GaN Technology

Gallium nitride (GaN) technology plays a critical role in modern power systems. With its ability to provide higher power density, faster switching speeds, and reduced energy losses, GaN semiconductors are revolutionary, enabling the creation of smaller, more efficient designs. Infineon is recognized as a leader in the GaN market, boasting the most extensive intellectual property portfolio in the industry, comprising approximately 450 patent families related to GaN.

The relevance of this technology extends beyond legal battles; it positions Infineon at the forefront of innovations in the semiconductor sector. The company's mastery of various materials, including silicon (Si), silicon carbide (SiC), and gallium nitride, underscores its comprehensive approach to meeting the complex challenges of today's energy demands.

Related Developments and Future Outlook

In tandem with this case in the U.S., Infineon is pursuing similar actions in Germany, where the German patent office also confirmed the validity of a patent held by the company. Infineon has already achieved a ruling from Munich District Court I, which found another patent infringement by Innoscience in August 2025, further reinforcing Infineon's legal stance.

This latest ITC ruling marks another step in Infineon's ongoing efforts to protect its innovations and solidify its leadership in the semiconductor industry. As the world increasingly turns toward energy-efficient technologies, GaN will continue to play a pivotal role in shaping power electronics. Infineon’s commitment to innovation and the legal frameworks that protect these technologies will undoubtedly contribute to addressing global challenges and propel the company into future growth.

Conclusion

The ITC's support of Infineon against Innoscience serves as a significant indication of the semiconductor company's robust patent strategy in an increasingly competitive market. As the final ruling approaches, the implications of this decision may extend beyond legal boundaries, shaping the landscape for GaN technology and setting a precedent for how patent rights are upheld in the semiconductor field. Infineon stands firm, ready to lead the charge in innovation while fighting for fair market practices.