SK hynix Starts Mass Production of Revolutionary 321-Layer QLC NAND Flash Technology
SK hynix's Innovative Leap with 321-Layer QLC NAND Flash
In a significant advancement in the semiconductor industry, SK hynix Inc. has officially announced the commencement of mass production of its remarkable 321-layer 2Tb QLC (Quad-Level Cell) NAND flash memory. This technological milestone not only represents the first successful deployment of a NAND flash with over 300 layers but also sets a new precedent in memory chip density.
The company has outlined plans to release this groundbreaking product in the first half of the upcoming year, following the completion of necessary validation processes with global customers. With this new product, SK hynix aims to address the growing demands for high-capacity storage solutions driven by trends like artificial intelligence (AI) and big data analytics.
Enhanced Performance and Increased Capacity
The standout feature of the 321-layer QLC NAND flash is its enhanced capacity, boasting double the storage of its predecessors. A crucial part of this advancement is the increase in the number of independent operational units, referred to as
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