#South Korea #semiconductor technology #DB HiTek #Gan HEMT #Chungcheongbuk-do

DB HiTek Advances in 650V GaN HEMT Technology

Introduction

On September 11, 2025, DB HiTek, a leading manufacturer of specialized 8-inch semiconductors, announced its progress on the 650V E-Mode GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) technology. This advancement marks a significant milestone in the evolution of high-performance, energy-efficient semiconductor solutions suitable for various applications, including electric vehicle (EV) charging infrastructure and advanced data centers.

The Significance of GaN Technology

Gallium Nitride semiconductors present numerous advantages over traditional silicon-based devices, especially in high-voltage, high-frequency, and high-temperature conditions. The 650V E-Mode GaN HEMT is particularly noteworthy for its rapid switching capabilities and operational stability, making it an excellent candidate for modern energy conversion systems, such as those used in EVs and next-generation 5G networks.

DB HiTek recognized the potential of GaN and SiC (Silicon Carbide) technologies early on, investing heavily in their development in 2022 when the compound semiconductor market was still emerging. A spokesperson from the company stated, "DB HiTek is globally recognized for its leadership in silicon-based energy semiconductor technologies and is praised for pioneering the industry's first 0.18 µm BCDMOS process. By enhancing our GaN process capabilities and expanding our technology portfolio, we aim to strengthen our market competitiveness."

Upcoming GaN MPW Project

As part of its strategic initiatives, DB HiTek plans to introduce a specialized GaN Multichip Wafer (MPW) project by the end of October 2025. This undertaking will allow customers to access the latest in semiconductor innovation and optimized performance, positioning them at the forefront of cutting-edge technology development.

The MPW project will enable various clients to collaboratively develop and test new designs, facilitating faster transitions from concept to production and ultimately driving advancements in several high-tech sectors.

Facility Expansion in Chungcheongbuk-do

To support these initiatives, DB HiTek is expanding its cleanroom facilities at its Fab2 site located in Chungcheongbuk-do, South Korea. This expansion will reportedly increase the monthly production capacity by approximately 35,000 8-inch wafers, enhancing the production of GaN, BCDMOS, and SiC processes, and raising the total monthly capacity by 23%—from 154,000 to 190,000 wafers.

This strategic investment underscores DB HiTek's commitment to meeting the rising demand for advanced semiconductor solutions and maintaining its competitive edge in the rapidly evolving market.

Industry Engagement at ICSCRM 2025

In addition to its internal advancements, DB HiTek will participate in the upcoming ICSCRM (International Conference on Silicon Carbide and Related Materials) in Busan, scheduled for September 15-18, 2025. This event will showcase the latest developments in SiC, GaN, and BCDMOS technologies. It provides an invaluable opportunity to engage with industry leaders and potential clients, further solidifying DB HiTek's position in the global semiconductor landscape.

DB HiTek's focus on innovation and its proactive approach to expanding its capabilities and technologies clearly indicate its intent to lead the semiconductor revolution. By investing in cutting-edge GaN technologies and fostering industry connections, the company is poised for continued success and growth in the high-demand semiconductor market.