#South Korea #Semiconductor #DB HiTek #Gan HEMT #Chungcheongbuk-do

DB HiTek Launches Customer Enablement for 650V GaN HEMT Technology

DB HiTek, a leading 8-inch specialty wafer foundry, recently announced that it is in the final stages of developing its groundbreaking 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process. This innovative technology promises to redefine power semiconductor capabilities for a plethora of applications, including artificial intelligence data centers, electric vehicle charging infrastructures, and advanced 5G network devices.

GaN-based semiconductors have emerged as a superior alternative to traditional silicon-based devices, particularly in high voltage, high-frequency, and high-temperature operational environments. The 650V E-Mode GaN HEMT stands out for its high-speed switching capability and operational robustness, making it an ideal choice for various power electronics applications that demand enhanced performance.

As part of its strategy to fortify its position in the semiconductor landscape, DB HiTek initially identified Gallium Nitride (GaN) and Silicon Carbide (SiC) as fundamental growth factors in 2022. Since that time, the company has made substantial investments in developing these technologies. A spokesperson from DB HiTek stated, "We have solidified our reputation in power semiconductor technology, having launched the industry's first 0.18 µm BCDMOS process. Integrating GaN process capabilities will further enhance our competitive edge, diversifying our technology offerings."

Looking ahead, DB HiTek plans to launch processes optimized for both 200V and enhanced 650V GaN integration, tailored specifically for integrated circuits by the end of 2026. This initiative is in response to market demands and the evolving needs of their customers.

To support these innovations, DB HiTek is expanding its cleanroom facilities at Fab2, located in Chungcheongbuk-do, South Korea. This expansion aims to increase production capacity to approximately 35,000 8-inch wafers per month. As a result, the total monthly production capacity will rise from 154,000 to 190,000 wafers, marking a notable 23% increase.

DB HiTek is also set to participate in the upcoming 2025 ICSCRM (International Conference on Silicon Carbide and Related Materials), scheduled to take place from September 15 to 18 at the BEXCO exhibition center in Busan. At this significant global forum, DB HiTek will highlight advancements in SiC technologies alongside its GaN and BCDMOS innovations. This presents an excellent opportunity for the company to forge stronger relationships with clients and industry leaders.

The 650V E-Mode GaN HEMT process highlights DB HiTek's commitment to advancing semiconductor technology that positions them to meet the increasing demands of modern electronic applications. As the industry anticipates the rollout of this pivotal technology, DB HiTek is poised to solidify its leadership in the burgeoning semiconductor market.