NoMIS Power Announces Major Breakthrough in SiC MOSFET Technology for Enhanced Power Electronics

Major Advancement in SiC MOSFET Technology by NoMIS Power

NoMIS Power Corporation, a pioneering name in the field of power semiconductor technology, has recently unveiled remarkable enhancements in its next-generation 1.2 kV planar SiC MOSFET platform. This announcement, made on May 1, 2025, marks a significant step forward in power electronics, as the company reports substantial reductions in on-resistance, achieved through meticulous optimization of device design and process steps.

One of the standout features of these new SiC MOSFETs is their impressive specific on-resistance (Ron,sp), which has reached an excellent 2.5 mΩ-cm² at room temperature. This improvement comes with a thicker gate oxide of 50 nm, positioning NoMIS Power's devices to support higher-frequency switching with lower input capacitance and enhanced reliability.

The latest SiC MOSFETs signify a remarkable 16% reduction in Ron,sp compared to the previous generation, all while utilizing the same foundational process. This means that system designers can now extract greater efficiency and power density from previously existing footprints—a true game-changer in the industry.

Additionally, NoMIS Power's groundbreaking MOSFETs allow gate drivers to operate seamlessly at gate-to-source voltages (Vgs) of +18 V or +20 V, maintaining nearly identical performance levels. This innovation eliminates the need for a redesign of gate drivers in existing applications, simplifying the integration of SiC technology into legacy power electronics platforms.

Dr. Seung Yup Jang, Vice President and Head of SiC Device Development at NoMIS Power, expressed enthusiasm for these advancements, stating, "These new planar SiC MOSFETs push us further ahead of the curve. We're not just improving benchmarks—we're removing barriers to SiC adoption by giving system designers more flexibility, better performance, and greater confidence."

The latest series of SiC MOSFETs matches the quality and performance of top-tier global offerings, positioning NoMIS Power as a leader in this competitive market. Their reliability and world-class performance empower system upgrades to be executed with confidence, enabling engineers and designers to take bold steps forward.

This breakthrough innovation will be showcased at PCIM Europe 2025, taking place in Nuremberg, Germany from May 6 to May 8. Attendees will have the chance to explore NoMIS Power’s enhanced capabilities in high-voltage SiC and learn about the company’s custom design services at their booth.

Established in 2020 as a spinout of the University at Albany's College of Nanotechnology, Science, and Engineering, NoMIS Power specializes in the design and development of advanced power semiconductor devices and power packaging architectures tailored for the global power electronics market. The company is committed to enabling innovative solutions that meet the demands of a rapidly evolving industry.

As the landscape of power electronics continues to evolve, NoMIS Power remains at the forefront, propelling advancements that not only promise enhanced performance but also expand the horizons for future innovations in semiconductor technology. Stay tuned for more exciting developments from this industry leader.