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iDEAL Semiconductor's Major Milestone in Automotive Technology

In a significant advancement for the semiconductor industry, iDEAL Semiconductor recently announced that its innovative SuperQ™ technology has successfully obtained the AEC-Q101 automotive qualification. This achievement marks a notable expansion for the company into markets that require high reliability, especially in automotive applications where reliability and efficiency are paramount.

The highlight of this announcement is the launch of the iS20M028S1CQ, a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) boasting a voltage rating of 200V and an impressively low on-resistance of 25 mΩ at a nominal temperature of 175 °C. The introduction of this MOSFET represents a significant milestone for iDEAL, as it is the first product from the company to meet automotive qualification standards.

SuperQ technology is a groundbreaking improvement in silicon-based MOSFETs, delivering higher efficiency with lower switching losses and superior conduction capabilities, all while maintaining the inherent robustness and reliability that silicon provides. The successful certification underscores SuperQ's ability to meet the stringent automotive standards required for applications such as electric vehicle propulsion systems, onboard chargers, and advanced driver-assistance systems (ADAS).

Mark Granahan, CEO and founder of iDEAL Semiconductor, expressed his enthusiasm regarding this achievement. "This is a crucial step that leverages SuperQ's robustness and opens new markets for iDEAL," he stated. He further emphasized that the automotive qualification validates the potential of their technology to enhance the efficiency of electric transportation and beyond, providing customers with more sustainable and dependable power solutions.

Besides the automotive sector, the iS20M028S1CQ MOSFET is also tailored for a range of applications, including motor drives, battery protection, AI server units, and solar energy solutions. The device fits within iDEAL's 200V product family, which offers exceptional performance in a compact 5 x 6 mm PDFN package, making it suitable for high-volume production without sacrificing quality or performance.

The advancements offered by the iS20M028S1CQ are notable, as it delivers performance metrics that are up to 1.7 times better than competitors, ensuring a competitive edge in increasingly technology-driven sectors. The efficient design of the MOSFET allows manufacturers to adopt these technologies seamlessly into their production lines, enhancing the overall quality of their offerings.

iDEAL Semiconductor, headquartered in Lehigh Valley, Pennsylvania, is recognized as a leading developer of next-generation silicon-based power devices. With a mission centered on maximizing the properties of silicon, the company leverages its patented SuperQ technology to promote revolutionary energy efficiency via conventional CMOS processes, all while preserving the benefits of silicon.

As the world shifts towards more sustainable energy solutions, technologies like SuperQ are pivotal in facilitating a greener power consumption strategy across various industries. iDEAL's commitment to innovation and excellence positions it well within the competitive landscape of semiconductor devices, making it an exciting company to watch in the coming years.

For more information about specifications and ordering the iS20M028S1CQ, you can visit iDEAL Semiconductor's website.