Unlocking New Horizons: The Advanced Analytical Technology Symposium 2025

Advanced Analytical Technology Symposium 2025

On November 21, 2025, Toray Research Center will host the "Advanced Analytical Technology Symposium 2025". Since its establishment in 1978, the company has consistently focused on developing and implementing innovative analytical technologies with a mission to push the limits of analysis. The newly founded "Advanced Analysis Platform" serves as an open innovation hub aimed at further advancing analytical technologies.

This year's symposium will revolve around the theme "New Sciences Uncovered by Advanced Analysis." We are honored to invite Professor Toshirou Hiramoto from the University of Tokyo as a special keynote speaker. Professor Hiramoto is actively involved in groundbreaking research that seeks to explore the limits of silicon CMOS devices, aiming to contribute to a highly information-oriented society and achieving carbon neutrality. During the symposium, we will also present four remarkable advancements in our latest analytical technologies that have yielded significant results over the past year.

Event Details

- Date and Time: November 21, 2025, 13:30 JST (Online Format)
- Participation Fee: Free
- Registration: Please register using the form provided.

Lecture Contents:

Keynote Talk 1: Trends in Advanced Logic Semiconductors: Device Miniaturization and Structural Evolution

Presented by Professor Toshirou Hiramoto, University of Tokyo

The advancements in logic semiconductors have been remarkable, leading the technology sector in today’s IT society—especially with the rise of generative AI. This talk will provide an overview of the rapidly changing landscape of semiconductors in our country and around the world. It will discuss how the driving forces have shifted from smartphones to AI, and how NVIDIA's emergence has redefined the major players in this industry. Furthermore, we will track the ongoing trends in the miniaturization of logic devices, detailing the evolution of device structures from FinFET to Gate-All-Around (GAA) and Complementary FET (CFET). Key elements such as 3D technology and the critical challenges posed by thermal management will also be explored, providing insights into the future of advanced logic semiconductors backed by data.

Keynote Talk 2: Toray Research Center's Challenges in Advanced Analysis

Presented by Naoki Muraki, Division Head, Toray Research Center

At Toray Research Center, we constantly seek to meet diverse customer needs through the utilization of cutting-edge technology and equipment. In this presentation, we will discuss our commitment to advanced analysis, the latest trends in analytical technologies, and the future we envision.

Lecture 1: Nano-resolution High-Order Structural Analysis of Industrial Materials Using Upward-Irradiation AFM-IR

Presented by Ryuya Saka, Head of Structural Chemistry Research Department, Toray Research Center

The AFM-IR is an advanced analytical technique that enables chemical structure analysis at the nanometer scale. With over 12 years of experience utilizing AFM-IR technology, Toray Research Center has accumulated extensive know-how and advanced pretreatment techniques. We have recently integrated a cutting-edge upward-irradiation AFM-IR apparatus, achieving a spatial resolution of 30 nanometers, the first of its kind in Japan. This presentation will highlight the utility of AFM-IR technology and its future prospects by showcasing cases of phase separation structure visualization in polymer alloys and high-order structural analysis of composite materials.

Lecture 2: High-Resolution Measurements of Electronic States in Si Inversion Layers Using Laser Angle-Resolved Photoemission Spectroscopy

Presented by Tomohiro Sakata, Surface Science Research Department, Toray Research Center

Photoemission spectroscopy is a versatile method for elemental quantification and chemical state analysis; however, modifying the incident light type and detection methods can enable a more detailed evaluation of electronic states. Recent advancements in photoemission spectroscopy using high-brightness lasers have facilitated time-resolved and polarization-dependent measurements, allowing for insights into unoccupied electronic states and band dispersion. This lecture will discuss the laser angle-resolved photoemission spectroscopy results revealing the splitting mechanisms of Si band dispersion in MOSFET operation, which are crucial indicators for device performance.

Lecture 3: Deepening Nano-order Spectral Analysis Using Transmission Electron Microscopy

Presented by Naohiko Kawasaki, Morphological Sciences Research Department, Toray Research Center

To gather information related to physical properties as well as crystal structure and elemental composition at nanometer-scale spatial resolution, we have enhanced the spectral analysis techniques using transmission electron microscopy. The low-loss EELS technique contains valuable information about electron energy states, although its interpretation can be complicated due to the overlapping influence of plasmons. This lecture will present a case study that actively employs plasmons to analyze local conductivity in metals. Additionally, based on newly constructed experimental systems capable of detecting up to the infrared region, we will discuss challenges related to artifacts stemming from thin sample usage and illustrate successful extraction of band gap and defect information.

Lecture 4: Development of Novel Analytical Method Utilizing SIMS-OES/CL

Presented by Takashi Miyamoto, Surface Science Research Department, Toray Research Center

The SIMS-OES method, which utilizes light emission during ion irradiations in SIMS analysis, introduces a new angle to secondary ion detection by simultaneously obtaining optical information from the same area. This talk will present attempts to estimate local temperatures via light emission intensity analysis and to explore the correlation between ion irradiation conditions and sample responses. Also, we will discuss investigations into nitrogen detection for comprehensive composition analysis and efforts to conduct depth-wise structural analysis utilizing SIMS-CL. By integrating these, we aim to showcase the potential for multidimensional analysis that evaluates composition, impurities, and structure simultaneously, contributing to the high sensitivity and low-damage advancements in SIMS through a better understanding of secondary ion generation processes.