DB HiTek Achieves Reliability Qualification for 1200V SiC MOSFET Production Process

On September 9, 2026, DB HiTek, a leading South Korean company specializing in custom 8-inch semiconductor manufacturing, proudly announced the successful completion of its reliability qualification for 1200V silicon carbide (SiC) MOSFET production. This milestone not only marks a significant achievement for the company but also sets the stage for its expansion into the 8-inch SiC custom manufacturing market, with mass production planned for 2027.

Silicon Carbide (SiC) is considered the next-generation power semiconductor material, providing enhanced performance over traditional silicon (Si) in high temperature and high voltage environments. This makes it especially suitable for electric vehicles (EVs), renewable energy systems, and industrial power equipment. Although the SiC market is currently dominated by 6-inch semiconductors, leading semiconductor manufacturers worldwide are transitioning to 8-inch substrates in order to optimize production efficiency and price competitiveness. DB HiTek recognized this market shift and has developed its own 8-inch SiC processing technology to enhance its custom manufacturing capabilities.

By optimizing its high-performance SiC MOSFET process, DB HiTek has achieved competitive electrical parameters and a high reliability level. The company has successfully created the world's first complete production flow for the 1200V SiC MOSFETs, establishing a platform that supports customers in design, manufacturing, electrical parameters, and reliability qualification.

To facilitate the commercial launch of its 8-inch SiC semiconductor division, DB HiTek offers customers process design kits (PDKs) for its proprietary first and second-generation 1200V SiC MOSFET manufacturing processes. The third-generation PDK set is set to be introduced in November, which will help customers minimize resource requirements during the initial development stages, accelerate prototype production, and reduce product development time by more than a year.

The second-generation process included in the PDK achieves a specific on-resistance (Rsp) of 2.5 mΩ·cm² or less and a threshold voltage (Vth) of 3V or higher at a gate voltage of 18V in the on-state. This process has also undergone reliability qualification, which is a rigorous development stage. The third-generation process, anticipated for market release in November, is expected to achieve an on-resistance of 2.3 mΩ·cm² or less at the same gate voltage, along with a short-circuit withstand time (SCWT) of at least 2.5 μs within a safe operating area during a short circuit (SCSOA).

Following the completion of qualification, DB HiTek plans to make the third-generation PDK available to customers while preparing its processes to provide access to long-term customers in the third quarter of this year. This service will be open to all customers starting in the second quarter of 2027.

A spokesperson for DB HiTek noted, "The successful completion of reliability qualification for our 1200V SiC MOSFET manufacturing process is significant, demonstrating that we are the world's first to secure the essential technological and manufacturing foundations needed to provide 8-inch SiC semiconductor custom manufacturing services. We will continue preparations for mass production of 8-inch SiC transistors in 2027 to establish our market position and strengthen our competitiveness in the new-generation power semiconductor custom market."