DB HiTek Advances in 650V GaN HEMT Technology for Future Applications

DB HiTek, known for its cutting-edge semiconductor technology, recently announced its progress toward finalizing its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process. This innovative platform represents a significant leap in power semiconductor developments, catering to a variety of high-tech applications including Electric Vehicle (EV) charging infrastructure, hyperscale data center power systems, and advanced 5G network equipment.

As the semiconductor industry continues to shift towards more efficient and compact solutions, GaN-based semiconductors offer notable advantages over traditional silicon alternatives. They are capable of delivering exceptional performance under extreme conditions, including high-voltage, high-frequency, and high-temperature scenarios. The 650V E-Mode GaN HEMT is particularly distinguished by its rapid switching capabilities and unparalleled operational stability, key attributes that will likely enhance its adoption in the technology landscape.

DB HiTek’s dedication to innovation in this field is evident in its strategic foresight. In 2022, recognizing the potential of compound semiconductors, the company identified GaN and SiC (Silicon Carbide) as vital drivers for growth and made substantial investments in developing these processes. “With our established reputation for silicon-based power semiconductor technologies, including the industry's first 0.18µm BCDMOS process, the addition of GaN capabilities will further elevate our competitive edge,” said a spokesperson from DB HiTek.

In addition to its current developments, DB HiTek has ambitious plans for the future. Following the launch of the 650V GaN HEMT process, the company intends to introduce a 200V GaN process and a 650V variant that is optimized for Integrated Circuit (IC) integration by the end of 2026. These efforts will allow DB HiTek to extend its GaN portfolio across various voltage levels, aligning production with market demands and specific customer needs.

To support these ambitious initiatives, DB HiTek is expanding its cleanroom facilities at Fab2, located in Chungcheongbuk-do, South Korea. This expansion is expected to boost capacity by an additional 35,000 8-inch wafers per month, which will facilitate the production of GaN, BCDMOS, and SiC semiconductor processes. Once completed, the overall monthly wafer capacity of DB HiTek will rise by 23%, from 154,000 to an impressive 190,000 wafers.

The company is also gearing up to engage with industry stakeholders at the upcoming International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025, scheduled for September 15-18 in Busan, South Korea. This conference will showcase DB HiTek’s advancements in SiC and BCDMOS technologies, alongside their latest GaN developments, providing an excellent platform to interact directly with customers and leaders in the semiconductor sector.

In summary, DB HiTek is positioning itself at the forefront of power semiconductor technology. With the nearing completion of its 650V GaN HEMT process and an expanding technology portfolio, the company aims to meet rising industry demands and maintain its leadership in this critical market.