#USA #Albany #NoMIS Power #SiC MOSFET #High-Voltage Technology

NoMIS Power Demonstrates 6.5 kV SiC MOSFET Technology

NoMIS Power Corporation, a renowned leader in Silicon Carbide (SiC) power semiconductor innovation, has reached an exciting milestone with the successful demonstration of its first 6.5 kV large-die SiC MOSFET. This breakthrough device showcases impressive specifications, including an ability to handle over 8 kV blocking voltage, a low on-resistance of 90 mΩ, and a maximum drain current of 55 A. Such achievements solidify NoMIS Power's position as a prominent U.S. source for high-voltage SiC devices and lay the groundwork for the company’s ambitious future roadmap toward 10 kV SiC MOSFETs and 20 kV SiC Insulated Gate Bipolar Transistors (IGBTs).

Expanding the SiC Technology Roadmap

The company elaborated on its comprehensive roadmap for high-voltage SiC technology, which encompasses three primary stages:

• - 3.3 kV devices are currently in production, showcasing a variety of models with on-resistances ranging from 25 mΩ to 80 mΩ, suited for different applications and power needs.
• - 6.5 kV samples are now available to U.S.-based customers, with an expanding selection that includes on-resistance variants, smaller dies, hybrid junction-barrier Schottky FET (JBSFET) devices, and standalone diodes. The JBSFET construction in particular enhances durability against body diode degradation, positioning it for critical uses in various sectors, such as high-voltage direct current (HVDC) systems and solid-state transformers.
• - 10 kV and above are currently being developed, set to begin sampling in the fourth quarter of 2026. These devices target various applications including grid-scale HVDC, advanced traction systems, and cutting-edge pulsed power systems.

Dr. Adam Morgan, Co-Founder and CEO of NoMIS Power, remarked, "Our demonstration of 6.5 kV across an 8 kV blocking capability confirms the scalability of our planar SiC platform from the reliable 3.3 kV devices which are already in the market. High-voltage SiC technology is a key enabler across numerous critical sectors including data centers, power grids, and aerospace applications, and we are committed to building this capability domestically in the U.S."

A Domestic Solution for High-Voltage SiC Needs

NoMIS Power presents a vital domestic alternative for customers reliant on single suppliers of high-voltage SiC technology. The devices are specifically designed, aware of ITAR and DFARS regulations, and are already integrated into significant U.S. government programs, including initiatives spearheaded by the Department of Energy and the Department of War. By offering tailored device qualifications and comprehensive design support, NoMIS Power aims to mitigate supply chain risks that can compromise mission-critical projects.

Based at the Albany Nanotech Complex in Albany, New York, NoMIS Power is dedicated to furthering advancements in SiC devices, packaging integrations, and power module designs, ensuring robustness for demanding applications.

Availability and Future Prospects

The 6.5 kV SiC MOSFET is being sampled to U.S. customers for evaluation, with standard production anticipated by Q4 2026. The company is actively collaborating with system developers on various projects, promoting the advantages of SiC technology.

High-voltage SiC applications relevant to HVDC systems, solid-state transformers, advanced power charging systems, and aerospace platforms can benefit from this progressive step in semiconductor technology. Companies interested in aligning with the 6.5 kV, 10 kV, and 20 kV roadmap from NoMIS Power are encouraged to reach out for further engagement.

For more information about NoMIS Power and its innovative SiC solutions, you can visit www.NoMISPower.com.