#South Korea #Seoul #SK hynix #NAND Flash #UFS 4.1

SK hynix Unveils Revolutionary UFS 4.1 Memory Solution

SK hynix Inc., a leading global semiconductor supplier, has today announced the launch of its UFS 4.1 memory solution. This new product utilizes the world’s highest 321-layer NAND technology, promising to set new standards in performance for flagship smartphones. In a market increasingly driven by high-performance demands and on-device AI functionality, the UFS 4.1 solution is designed to meet these needs effectively.

Optimized for Next-Gen Mobile Applications

The UFS 4.1 product comes at a crucial time as the mobile landscape evolves to incorporate advanced AI applications that require enhanced performance while maintaining low power consumption. This innovation marks a substantial leap from its predecessor, the 238-high NAND, with a notable 7% improvement in energy efficiency. The UFS 4.1's design also boasts a remarkable thickness of just 0.85mm, significantly reduced from 1mm, allowing it to seamlessly integrate into ultra-slim smartphones without compromising on capacity.

Unmatched Speed and Efficiency

One of the standout features of the UFS 4.1 solution is its impressive data transfer rate of 4300MB/s, which is recognized as the fastest sequential read speed currently available for fourth-generation UFS technology. This speed enhancement not only enhances the performance of regular tasks but is also pivotal for demanding applications that rely heavily on rapid data processing. Additionally, improvements in random read and write speeds of 15% and 40%, respectively, ensure that multitasking capabilities are significantly enhanced, promising users a smooth and efficient experience.

Designed for AI Workloads

As artificial intelligence becomes integral to mobile applications, the need for quick data access and response times has never been more crucial. The UFS 4.1’s specifications have been tailored specifically for these AI workloads, ensuring that necessary data is available promptly, thus improving overall application responsiveness and user engagement. With the rising expectations from consumers, this solution represents a strategic advancement in mobile memory technology.

Future Projections and Product Availability

SK hynix has ambitious plans for its new UFS 4.1 memory solution. The company aims to receive customer qualifications by the end of the year and expects to commence mass production by the first quarter of the following year. The UFS 4.1 will be available in two storage capacities, 512GB and 1TB, catering to the diverse needs of smartphone manufacturers.

Ahn Hyun, President and Chief Development Officer of SK hynix, expressed confidence in the company’s trajectory, stating, "We are on track to expand our leadership as a full-stack AI memory provider in the NAND sector by continually deepening our product portfolio with cutting-edge AI technology."

Conclusion

With the launch of the UFS 4.1 solution, SK hynix is well-positioned to strengthen its foothold in the memory supply industry. The development not only showcases their commitment to innovation but also reflects the growing demand for advanced memory solutions that support increasingly sophisticated mobile technologies. This new product is set to redefine user experiences in smartphones, paving the way for the next generation of mobile technology.

For more information about SK hynix and its latest offerings, please visit www.skhynix.com.