SK hynix Unveils Its Future DRAM Vision
Recently, at the IEEE VLSI symposium 2025 in Kyoto, Japan, SK hynix Inc. showcased its long-term DRAM technology roadmap, designed to span the next three decades. The event, held from June 8 to 12, was a critical platform for the company to outline its vision for future innovations in the semiconductor industry.
The Challenge Ahead
In the keynote delivered by Cha Seon Yong, the Chief Technology Officer (CTO) of SK hynix, he addressed the challenges faced by current DRAM technology, especially in miniaturization. He emphasized that
scaling issues have become more pronounced, making it difficult to enhance performance and capacity using existing platforms. This realization has led SK hynix to consider transitioning to a cutting-edge
4F² VG (Vertical Gate) platform, which is expected to replace the conventional 10-nanometer level technology.
The 4F² VG platform represents a significant advancement in memory technology by reducing the cell area and thereby increasing integration, speed, and efficiency. Cha explained that, currently, the industry predominantly uses 6F² cells, but by leveraging 4F² cell technology along with
wafer bonding techniques, SK hynix aims to bolster both cell efficiency and electrical characteristics.
Key Innovations in the Roadmap
One of the most exciting elements of the presentation was the introduction of
3D DRAM technology as a cornerstone of the future roadmap. Although some skeptics express concerns over potential cost implications due to increased layer stacking, Cha reassured listeners that continuous innovation could address these issues and unlock new opportunities.
In his compelling narrative, the CTO remarked that back in 2010, there was skepticism about the viability of DRAM technology when approaching the 20-nanometer scale. However, relentless innovation has allowed the industry to far exceed those expectations, paving the way for even further advancements in the years ahead.
In addition to structural transformations, the company plans to innovate in critical materials and components, setting a robust foundation for sustained growth. This strategic effort aims to not only advance DRAM technology but also cultivate a new generation of engineers who will carry forward the torch of innovation within the semiconductor landscape.
Looking to the Future
The goal of this ambitious roadmap is to create a sustainable future for DRAM technology. The collaboration among industry stakeholders will be crucial for transforming this vision into reality. As Cha concluded his address, he emphasized the importance of industry cooperation, stating, “SK hynix will continue to be a guiding force in long-term technological innovation, creating milestones for the next generation of engineers in the DRAM field.”
On the event's final day, Vice President Joodong Park is set to present his findings concerning the impact of VG and wafer bonding technologies on DRAM's electrical characteristics, further enriching the dialogue sparked at the symposium.
About SK hynix Inc.
SK hynix, headquartered in Korea, holds a leading position in the global semiconductor market, recognized for its dynamic random access memory (DRAM) and flash memory chips (NAND flash), catering to a wide array of customers. The company’s shares are traded on the Korea Exchange, with global depository shares listed on the Luxembourg Stock Exchange. For further details on SK hynix and its offerings, please visit
www.skhynix.com.