#South Korea #Power Semiconductors #DB HiTek #Gan HEMT #Chungcheongbuk-do

DB HiTek's Commitment to Advanced Semiconductor Technologies

In a significant move for the semiconductor industry, DB HiTek, a prominent leader in 8-inch specialty foundry services, recently announced its advancements in the development of its 650V E-Mode GaN HEMT (High Electron Mobility Transistor) process. This next-generation power semiconductor technology is poised to redefine efficiency and performance for a variety of applications, particularly in artificial intelligence data centers, robotics, and electric vehicle charging infrastructures.

As of September 11, 2025, DB HiTek is nearing the final stages of this groundbreaking process, highlighting its dedication to innovation in Gallium Nitride (GaN) technology. Notably, the company plans to offer a dedicated multi-project wafer (MPW) program for GaN by the end of October, showcasing its commitment to larger-scale production and client enablement.

GaN vs. Traditional Silicon Semiconductors

The introduction of GaN semiconductors marks a substantial upgrade over traditional silicon-based devices. GaN's ability to operate under higher voltage, frequency, and temperature conditions provides substantial benefits, including improved energy efficiency. The 650V E-Mode GaN HEMT stands out for its rapid switching performance and robust operational stability. These features make it particularly suitable for applications in electric vehicle charging, high-capacity energy conversion systems, and advanced 5G networking equipment.

With the semiconductor market's continuous evolution, particularly within compound semiconductors, DB HiTek has strategically invested in GaN and SiC (Silicon Carbide) processes. The company’s decision to focus on these materials came in 2022, recognizing their potential as key drivers for future growth. As a spokesperson for DB HiTek explained, "Our expertise in power semiconductor technologies, particularly our development of the industry's first 0.18 µm BCDMOS process, positions us well for integrating GaN capabilities to strengthen our competitive edge."

Expansion Plans

Future developments in DB HiTek's GaN offerings are already in sight, with plans to roll out both a 200V GaN process and further optimized versions of the 650V process designed for integrated circuit (IC) applications by 2026. This strategic vision aims to expand the GaN platform and align with emerging market needs and customer requirements.

To support these initiatives, DB HiTek is enhancing the cleanroom facilities at its Fab2 site located in Chungcheongbuk-do, South Korea. This expansion is expected to ramp up production capacity from approximately 35,000 monthly 8-inch wafers, facilitating the manufacturing of GaN, BCDMOS, and SiC processes. Upon completion, the total wafer production capacity will see an increase from 154,000 to 190,000 wafers monthly, which represents a 23% enhancement in operational capability.

Global Engagement at ICSCRM 2025

In conjunction with these advancements, DB HiTek will also be participating in the 2025 International Conference on Silicon Carbide and Related Materials (ICSCRM) taking place from September 15 to 18 in Busan. This global forum will serve as an excellent platform for DB HiTek to showcase its latest developments in SiC process technologies alongside its GaN and BCDMOS innovations while directly engaging with clients and industry leaders.

As DB HiTek prepares to propel its GaN HEMT offering, the company's strides echo a larger trend toward high-efficiency, compact power electronics—fueling the next generation of technology from electric vehicles to hyper-scale data centers.

In conclusion, DB HiTek is set to make a profound impact on the semiconductor landscape, enhancing both its product offerings and its role within the industry. The advancements in GaN technology are not merely an upgrade; they represent a significant leap towards energy-efficient solutions and a sustainable technological future.