#Finland #Espoo #semiconductor technology #Beneq Transform #GaN Devices

Overview of Beneq's Achievement

Beneq, a prominent leader in Atomic Layer Deposition (ALD) technology, recently reached a significant milestone. The company's Transform ALD cluster tool has been officially qualified for mass production of Gallium Nitride (GaN)-based power devices by a Tier 1 manufacturer in Asia. This event marks a crucial development in the semiconductor sector, particularly in the production of high-performance power electronics.

Significance of GaN in Power Electronics

Gallium Nitride (GaN) semiconductors are becoming increasingly pivotal for enhancing the performance and efficiency of power electronic devices. They play an essential role in various applications within consumer electronics, automotive technology, datacenters, and broader industrial markets. By utilizing GaN, manufacturers can achieve higher efficiency, reduced energy loss, and improved performance in devices. The qualification of Beneq’s Transform platform reflects its relevance and capabilities in meeting the rigorous demands of commercial production in this market.

The Transform ALD Tool's Capabilities

The Beneq Transform platform employs a proprietary three-step process crucial for maintaining high-quality production standards: plasma-based surface pre-cleaning, plasma-enhanced Atomic Layer Deposition (PEALD) for interfacial layers, and thermal ALD for dielectric films. Each step is conducted under continuous vacuum conditions, ensuring a reliable and efficient process necessary for working with advanced materials like GaN and Silicon Carbide (SiC).

Furthermore, the Transform tool supports the deposition of nitride films, such as Aluminum Nitride (AlN) and Silicon Nitride (SiN), along with thermal ALD deposition of various dielectric films including aluminum oxide (Al₂O₃), AlN, silicon dioxide (SiO₂), and hafnium dioxide (HfO₂). This versatility supports a wide range of applications, whether it’s GaN High Electron Mobility Transistors (HEMTs), integrated circuits (ICs), or vertical devices, which are vital in the evolving technology landscape.

Designed for High Throughput

The design of the vacuum-integrated cluster tool enhances throughput while delivering best-in-class cost-of-ownership. Currently, there are seventeen Beneq Transform tools in operation globally, dedicated to GaN device production and technology development. This expansion signifies a strong commitment to supporting the growing demand for GaN applications.

Commitment to Customer Needs

Pasi Meriläinen, Vice President of Semiconductor ALD at Beneq, emphasizes that this qualification underscores the robust nature of their Transform platform and its strategic importance in the GaN manufacturing ecosystem. Beneq aims to continue facilitating the production goals of its clients through reliable, application-driven ALD solutions, supporting the broader semiconductor industry's advancement.

Collaborations Fuelling Innovation

The partnership between Beneq and imec, a world-leading research organization, also illustrates Beneq’s dedication to advancing GaN processing capabilities. As part of imec's Industrial Affiliation Program (IIAP), a newly commissioned Transform tool is set to bolster their joint research and development efforts in area of GaN surface treatments and dielectric integration, enhancing the feasibility of commercial manufacturing.

Conclusion

Beneq’s latest qualification of the Transform ALD tool marks a significant advancement in the GaN power device production arena. This development reaffirms the pivotal role of innovative technologies in powering next-generation electronic devices, setting the stage for broader industrial applications. As the demand for high-efficiency power solutions increases, Beneq is poised to lead the charge in GaN semiconductor manufacturing, providing essential tools and technologies for current and future applications.