#Japan #ROHM #Kyoto #AI servers #SiC MOSFET

ROHM's 750V SiC MOSFET: A Game-Changer for AI Server Power Supplies

In the ever-evolving realm of technology, ROHM Co., Ltd. has made a significant mark by integrating its innovative 750V Silicon Carbide (SiC) MOSFET into Battery Backup Units (BBUs) for AI server power supplies. This advancement comes at a time when the industry is making a marked transition towards High-Voltage Direct Current (HVDC) architectures, driven primarily by the rapid growth in generative AI technologies.

As we delve into the details, generative AI systems demand robust processing capabilities, leading to a surge in Graphics Processing Unit (GPU) performance and consequently escalating power consumption within data centers. To combat power transmission losses, the industry is increasingly leaning towards HVDC architectures, positioning ROHM's latest SiC power device as an essential solution for next-generation power supply systems.

The Role of SiC MOSFET in High-Voltage Applications

The device under discussion, the SCT4013DLL, is a 750V SiC MOSFET that has been strategically placed within a +400V / -400V power architecture for AI servers. What sets this component apart in high-voltage environments is its high-temperature tolerance, boasting a maximum junction temperature (Tj) of 175°C. Such a feature enables stable operation even under increased heat generation typically seen in devices handling high voltages and power densities.

Power Supply Requirements in Next-Generation AI Servers

Next-generation AI server power supplies necessitate backup systems that can manage high voltages and large currents immediately while minimizing power loss. With the adoption of 800VDC power architectures, the internal supply voltage to the BBU is expected to be around 560V. These operational needs showcase the critical role that ROHM's SiC MOSFETs will play in these applications, ensuring efficient and reliable power supply.

Furthermore, the high-voltage power devices must effectively support the intricacies of AI server operations, countering interruptions caused by power outages or transitory power issues. In this context, BBUs and Capacitor Units (CUs) become vital for protecting rack-level systems from failures, fortifying the sustainability of infrastructure critical for data processing.

Looking Ahead: The Future of Power Devices

ROHM has articulated its commitment to bolstering the development of power devices as markets for AI servers and data centers continue to expand. The strategic integration of SiC, Gallium Nitride (GaN), and silicon technologies is set to yield devices that not only meet but exceed the rigorous demands of forthcoming power supply frameworks. The harmony of these power devices with analog ICs is a crucial step toward achieving higher efficiency and sustainability across their product line.

To cater to engineers and designers, ROHM has also introduced user-friendly tools such as the 'Easy Part Finder' on its website. This resource provides crucial data and design models, enhancing the user experience for those looking to incorporate SiC technology into their systems.

For more insights, you can explore ROHM's complete lineup of SiC power devices and get access to extensive documentation and resources available on their official website.

As the data center ecosystem evolves, so does the technology behind it, and ROHM's innovations in SiC MOSFETs are paving the way for a future where AI systems operate efficiently and sustainably, redefining power management in the digital age.