DB HiTek Achieves Reliability Qualification for 8-Inch SiC MOSFET Manufacturing Process

DB HiTek Achieves Milestone in SiC MOSFET Manufacturing

DB HiTek, the first South Korean foundry focusing exclusively on 8-inch wafers, has made significant strides in the semiconductor industry by completing the reliability qualification for its 1200V Silicon Carbide (SiC) MOSFET manufacturing process. This achievement marks a pivotal moment for the company as it prepares for mass production set to begin in 2027.

Silicon Carbide is a next-generation power semiconductor material that outperforms traditional silicon in high-temperature and high-voltage environments. This makes it ideal for electric vehicles (EVs), renewable energy systems, and industrial electrical equipment. While 6-inch wafers currently dominate the SiC market, global semiconductor manufacturers are transitioning to 8-inch wafers to enhance production efficiency and cost competitiveness. DB HiTek has responded to this market shift by developing 8-inch SiC manufacturing technology, thus strengthening its foundry service capabilities.

With the optimization of its high-power SiC MOSFET manufacturing process, DB HiTek has achieved competitive electrical characteristics and high reliability levels. The company has implemented the world's first complete process for the fabrication of 8-inch SiC MOSFETs at 1200V, creating a comprehensive foundry service platform that assists customers throughout the design, manufacturing, electrical characterization, and reliability qualification stages.

To support the commercial deployment of its 8-inch SiC foundry business, DB HiTek offers clients process design kits (PDK) for their proprietary 1200V SiC MOSFET processes in both first and second generations. The third generation of the PDK is expected to be available in November and promises to drastically reduce resource requirements during the early stages of product development, speeding up prototyping and shortening development time by over a year.

The PDK covering the second generation process boasts a specific on-resistance (Rsp) of 2.5 mΩ•cm² or less, with a threshold voltage (Vth) of at least 3V for a gate-source voltage (Vgs(on)) of 18V. It has also successfully passed rigorous reliability qualification tests, a demanding phase in process development.

Currently, DB HiTek is qualifying its third-generation process, which aims for an on-resistance of 2.3 mΩ•cm² or less under the same gate-source voltage, and a short-circuit withstand time (SCWT) of at least 2.5 µs within the safe operating area (SCSOA). Upon completion of this qualification, the third-generation PDK will be made available to clients.

The firm aims to finalize the setup of its processes and grant access to its long-standing clients by the third quarter of this year. By the second quarter of 2027, this service will be extended to all clients.

A DB HiTek representative stated, “Completing the reliability qualification of our 1200V SiC MOSFET manufacturing process is particularly significant as it showcases our acquisition of the core process technology and manufacturing foundations needed to provide the world’s first 8-inch SiC foundry service.” They added, “We will continue to prepare for the mass production of 8-inch SiC devices by 2027, positioning ourselves in the market and enhancing our competitiveness in the next-generation power semiconductor foundry sector.”