#South Korea #Semiconductor #DB HiTek #Gan HEMT #North Chungcheong

DB HiTek Launches 650V GaN HEMT Process

DB HiTek, a prominent player in the eight-inch semiconductor manufacturing sector, has announced that it is in the final stages of developing its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) technology platform. This groundbreaking advancement is targeted towards high-efficiency applications including artificial intelligence (AI) data centers, robotics, and beyond.

In late October, the company plans to introduce a specialized Multi-Project Wafer (MPW) program for GaN, facilitating customer development initiatives. With their focus on GaN and Silicon Carbide (SiC) technologies, DB HiTek recognizes these materials as pivotal growth drivers in a market that is rapidly evolving and expanding. By leveraging GaN's superior performance capabilities in high-voltage and high-temperature environments, DB HiTek aims to improve energy efficiency across multiple domains, particularly in electric vehicle charging infrastructure, hyperscale data center energy conversion systems, and advanced 5G network devices.

DB HiTek's commitment to GaN technology dates back to 2022, during which they began investing significantly in the development of relevant processes in anticipation of future market needs. A representative from DB HiTek stated, “We have gained global recognition for our pioneering advancements in power semiconductor technologies, including the groundbreaking introduction of the first 0.18µm BCDMOS process in the industry. With our GaN process capabilities, we expect to enhance our competitiveness further, thanks to a diverse technology portfolio.”

Once the 650V GaN HEMT process is successfully implemented, DB HiTek has plans to roll out a 200V GaN process, along with integrating optimized GaN for integrated circuit applications by the end of 2026. The company is continuously striving to expand its GaN platform to cover a broader range of voltage levels to meet evolving market demands and customer requirements.

As part of these initiatives, DB HiTek is also expanding its cleanroom space at its Fab2 facility in North Chungcheong Province, South Korea. This expansion is expected to boost fabrication capacity by approximately 35,000 eight-inch wafers per month. Consequently, this will strengthen production capabilities for GaN, BCDMOS, and SiC processes and, upon completion, will increase the total monthly wafer production capacity by 23 percent, elevating it from 154,000 to 190,000 wafers.

DB HiTek will also participate in the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025, scheduled for September 15-18 at the BEXCO Convention Center in Busan. During this global industry forum, the company will showcase its advancements in SiC process development alongside its GaN and BCDMOS technologies, engaging directly with customers and leading experts in the sector.

As DB HiTek continues to push boundaries in semiconductor technology, the deployment of the 650V GaN HEMT process represents a significant milestone, ensuring the company remains at the forefront of innovation and competitiveness within the semiconductor industry.