#Finland #Espoo #ALD Technology #Beneq Transform #Wide Bandgap

Beneq Transform® XP: Redefining Atomic Layer Deposition Excellence

Beneq has recently unveiled its new ALD (Atomic Layer Deposition) platform, the Beneq Transform® XP, a state-of-the-art solution designed specifically for the demands of Wide Bandgap (WBG) power and RF device manufacturing. As a second-generation system, it offers a wealth of new features and performance enhancements that aim to address the evolving needs in the industry.

Advanced Features and Capabilities

The Transform® XP builds upon the foundational successes of its predecessor, the original Beneq Transform platform, by integrating advanced ALD control mechanisms. One of its standout features is its high-throughput nature, allowing for rapid production cycles that can dramatically increase the efficiency of manufacturing processes.

This next-gen platform includes a flow-optimized 25-wafer mini-batch thermal ALD reactor capable of achieving remarkable deposition rates. Cycle times for common ALD oxides and nitrides are now single-digit seconds, enabling manufacturers to accelerate their production schedules significantly. This capability is crucial for staying competitive in the fast-paced semiconductor landscape.

Another notable enhancement is the refined flow and pressure dynamics, which ensure outstanding uniformity both within wafer and across multiple wafers, even with film thicknesses as low as a few nanometers. To support manufacturers creating intricate structures, the Transform® XP boasts precise dwell-time control to maintain excellent conformality on high-aspect-ratio devices.

Enhanced Process Control with PEALD

The Beneq Transform® XP introduces advanced Plasma Enhanced Atomic Layer Deposition (PEALD) process control, a feature that allows manufacturers to optimize the management of low-energy ions effectively. This innovation paves the way for improved plasma pre-cleaning and deposition processes, leading to better interface quality, tunable passivation, and, ultimately, enhanced performance and reliability of the devices being produced.

Additionally, the system features in-cycle annealing, a proprietary technique that not only densifies but also purifies films during the deposition process. This step is essential for ensuring that materials achieve desired stoichiometric properties, low levels of impurities, and optimized crystalline alignment, including the orientation of AlN lattice structures which are pivotal in device performance.

Meeting Market Demands

“Transform® XP is our answer to the forthcoming challenges in power and RF device manufacturing,” stated Dr. Mikko Söderlund, the Head of Sales for Semiconductor ALD at Beneq. He emphasized that the improvements reflect direct feedback from customers who have relied on the original Transform® platform for its versatility and dependability. The new enhancements are introductions customers have actively requested: better ion control, accelerated cycles, and integral film densification—all integrated into a flexible platform.

With a proven track record, Beneq already has numerous Transform® clusters installed worldwide for pilot programs and production use, having shipped over 100 process modules to date. These deployments are aimed at aiding leading Integrated Device Manufacturers (IDMs), foundries, and Research and Technology Organizations (RTOs) that are advancing technologies beyond the Moore’s Law paradigm, often referred to as More-than-Moore technologies.

The Beneq Transform® XP is poised to become a crucial asset for those in the WBG device production space, offering solutions that meet the industry's growing performance demands while emphasizing efficiency, precision, and adaptability.

For more information about Beneq Transform® XP, visit Beneq’s official site.