#Japan #ROHM #Kyoto #SiC MOSFET #TSC3PAK

ROHM Introduces the Cutting-Edge TSC3PAK Package for SiC MOSFETs

In a significant advancement for the semiconductor industry, ROHM Co., Ltd. has launched its latest package design, the TSC3PAK. Measuring just 14.00 x 18.58 x 3.50 mm, this innovative package is specifically engineered for silicon carbide (SiC) MOSFETs, featuring a unique top-side cooling structure that significantly enhances heat dissipation. This technology accommodates automated mounting processes while delivering thermal performance that rivals existing through-hole packages such as TO-247-4L.

Enhancing Efficiency and Reliability

The ability to efficiently manage heat is crucial in power conversion circuits, especially for onboard chargers (OBCs) and electric compressors utilized in xEVs (electric vehicles). Traditional through-hole devices often require manual assembly, limiting their mounting efficiency and profile. However, the new TSC3PAK package is designed to allow for surface-mount technology, marking a pivotal shift in how SiC devices are incorporated into modern power systems.

In xEV applications, the need for rapid charging capabilities coupled with an extended driving range has propelled the adoption of SiC devices beyond traditional main inverters. By integrating this new TSC3PAK package, devices can now achieve comparable heat dissipation performance to conventional designs in a much more compact format, which is essential for the evolving landscape of electric vehicle technology.

Innovative Creapage Structure

One of the standout features of the TSC3PAK package is ROHM's proprietary groove structure that secures a long creepage distance of 6.66 mm. This engineering innovation allows the package to sustain an AC peak voltage of 1200 V in Pollution Degree 2 environments, rendering it compatible with a variety of applications while adhering to strict industry standards. This compatibility also enhances usability in markets demanding high reliability.

State-of-the-Art Performance

The TSC3PAK is integrated with ROHM's 4th Generation SiC MOSFETs, which are known for their low ON resistance and rapid switching capabilities. These characteristics substantially reduce switching losses during power conversion, leading to improved overall application efficiency and lower power consumption. Will the market see more integrations of this kind as the automotive industry evolves? It seems likely as demand for efficient power solutions continues to rise.

Production and Availability

Mass production of the TSC3PAK package commenced in June 2026, catering to a range of applications, including automotive systems — such as onboard chargers and electric compressors — as well as industrial equipment like photovoltaic (PV) inverters and server power supplies. A more efficient power system can yield beneficial impacts on both cost and performance, ultimately contributing to a healthier bottom line for manufacturers.

For detailed specifications, and to learn more about the TSC3PAK package and associated products, you can visit ROHM's official website. Through innovations like this, ROHM demonstrates its commitment to pushing the boundaries of what's possible in semiconductor technology.