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Webinar on SiC/GaN Power Devices for Next-Gen Applications

The intricate world of power electronics is evolving rapidly, and with it, the demand for high-performance power devices has surged. CMC Research, based in Chiyoda, Tokyo, is hosting a pivotal online seminar titled "Trends and Challenges of SiC/GaN Power Devices for Next-Gen Vehicles and Data Centers" on June 11, 2025. This insightful seminar will be conducted by Professor Katsuaki Iwamuro of Tsukuba University, an eminent authority in the field, from 13:30 to 16:30 via Zoom.

Seminar Overview

The increase in electric vehicle (EV) development efforts globally, along with the ever-growing energy demands of data centers, necessitates a shift towards high-efficiency power supplies. As countries aim to phase out gasoline vehicles by the 2030s, understanding the technological evolution of power devices like SiC and GaN becomes critical. However, challenges remain in performance, reliability, and cost-effectiveness that need to be addressed for widespread adoption.

Knowledge Gained from the Seminar

Participants will delve into how power devices are applied in data centers and electric vehicles. Key topics covered will include:

• - The current landscape and advancements in power devices.
• - Latest technology trends regarding Si, SiC, and GaN devices, emphasizing design and process technology.
• - Understanding the unique characteristics of Si and SiC devices, and the hurdles they face in market deployment.

Target Audience

This seminar is tailored for professionals engaged in power electronics development, power device sales, and those involved in the manufacturing and supply of power electronics equipment.

What to Expect

The session will comprise detailed discussions on the following:
1. Fundamentals of Power Electronics
- The role of power electronics and devices.
- Types and basic structures of power devices.
- Application fields of power devices and the benefits of high-frequency operation.

2. Advances and Challenges in Silicon Power Devices
- Key developments in MOSFET and IGBT technologies.
- Challenges associated with improving device characteristics.
- Supporting technologies for MOSFET and IGBT enhancements.

3. Current Status of SiC Power Devices
- Advantages of wide-bandgap semiconductors.
- The process technology behind SiC MOSFETs and the light it sheds on future developments.
- Points concerning the reliability and performance improvements of SiC devices.

4. GaN Power Devices Insights
- Structural dominance of GaN-on-Si technologies and the implications of this trend.
- GaN-HEMTs: features and challenges.
- Latest advancements in vertical GaN devices.

5. High-Temperature Applications
- Advantages of operating at high temperatures.
- The importance of packaging for SiC MOSFET modules.

How to Register

Interested attendees can register via CMC Research's official website. It's a great opportunity to engage in a Q&A session after the presentation, enabling direct interaction with experts.

With an admission fee of ¥55,000 (tax included), incentives are provided for CMC newsletter members and academic participants, significantly reducing costs. This webinar promises to be a comprehensive exploration of the current needs and future potential of high-performance power devices critical to the shifting landscape of automotive and data center technology.

Join us in advancing your knowledge and expertise in this essential field!