#South Korea #DB HiTek #Chungcheongbuk-do #GaN-HEMT #650V Technology

DB HiTek Announces Customer Support for the 650V GaN-HEMT Process

DB HiTek, a leading manufacturer known for its innovative 8-inch specialized chips, has recently entered the final stages of developing its 650V E-Mode GaN-HEMT (Gallium Nitride High Electron Mobility Transistor) process, a cutting-edge performance semiconductor platform. This advancement promises to significantly enhance efficiency and miniaturization for vital technologies including artificial intelligence data centers and electric vehicle charging systems.

The company is set to offer a specialized GaN Multi-Project Wafer (MPW) program starting at the end of October, designed to help clients swiftly adopt these new semiconductor technologies. Compared to traditional silicon-based power devices, GaN-based semiconductors deliver superior performance under high-voltage, high-frequency, and high-temperature operating conditions, showcasing extraordinary energy efficiency.

Notably, the 650V E-Mode GaN-HEMT is distinguished by its fast switching speed and robust operational stability, making it an ideal candidate for applications in EV charging infrastructure, power conversion systems in hyperscale data centers, and advanced 5G network devices.

In 2022, as the market for compound semiconductors began to blossom, DB HiTek identified Gallium Nitride (GaN) and Silicon Carbide (SiC) as pivotal growth drivers in the industry. Since then, the company has made substantial investments in the development of these processes. According to a DB HiTek spokesperson, “Our company has a well-established reputation for leading silicon-based power semiconductor technologies, including the development of the world’s first 0.18-micron BCDMOS process. By extending our capabilities to include GaN processes, we expect to enhance our competitiveness with a diverse and robust technology portfolio.”

Looking forward, DB HiTek plans to introduce a 200V GaN process and an IC-integrated optimized 650V GaN process by the end of 2026. This strategic initiative aims to broaden the technology spectrum in accordance with market demands and customer needs.

To support these ambitious initiatives, DB HiTek is expanding its cleanroom facilities at its Fab2 site in Chungcheongbuk-do, South Korea. This expansion aims to boost capacity by approximately 35,000 8-inch wafers per month, while enhancing production capabilities for GaN, BCDMOS, and SiC processes. Once completed, DB HiTek's total monthly capacity will increase by 23% from 154,000 to 190,000 wafers.

Additionally, DB HiTek is set to participate in the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025, happening from September 15 to 18 at BEXCO in Busan, South Korea. At this global industry forum, DB HiTek will showcase its GaN and BCDMOS technologies alongside advancements in SiC process development, and will connect directly with customers and industry leaders.

This launch marks a significant step in DB HiTek's journey towards becoming a more formidable force in the semiconductor industry, paving the way for technological advancements that promise to reshape various applications globally.