#United States #Washington, D.C. #Infineon #GaN Technology #Innoscience

US ITC Confirms Ban on Innoscience's GaN Products

In a significant ruling, the United States International Trade Commission (US ITC) has confirmed the ban on Innoscience's gallium nitride (GaN) products from the U.S. market. This decision follows the Final Determination issued on May 7, 2026, which found that Innoscience had infringed on a patent held by Infineon Technologies, a leading player in the GaN technology sector.

Johannes Schoiswohl, Senior Vice President and Head of the GaN Systems Business Line at Infineon, expressed confidence in the ruling, stating, "This decision once again highlights the robustness of Infineon's intellectual property. It reinforces our commitment to actively protect Infineon's patent portfolio and uphold fair competition in the industry."

This ruling marks a pivotal moment not just for Infineon, but also for the broader semiconductor industry, as it underscores the importance of intellectual property protection. With over 450 GaN patent families, Infineon is at the forefront of developing technology that enables high-performance power systems. Their manufacturing prowess in 300-millimeter GaN technology places them in a unique competitive position, allowing them to deliver superior products that meet the growing demands of decarbonization and digitalization initiatives across various sectors, including renewable energy systems, AI data centers, industrial automation, and electric vehicles.

The ITC's ruling adds to a series of legal victories for Infineon against Innoscience. In recent months, German courts have also ruled in favor of Infineon, confirming multiple instances of patent infringement by Innoscience. These rulings have led to a prohibition on Innoscience importing, selling, and marketing related products in Germany, alongside an order for them to compensate Infineon for damages.

GaN semiconductors are becoming increasingly crucial in the realm of energy-efficient power systems. They offer higher power density, faster switching speeds, and reduced energy loss, which is vital for creating smaller, more efficient designs that generate less heat and consume less power.

As Infineon continues to innovate and expand its capabilities, the reaffirmation of their intellectual property rights through the US ITC ruling is expected to bolster their market position. Infineon's commitment to advancing technology in power systems will play a significant role in addressing global energy challenges and catalyzing the transition towards sustainable energy solutions.

The focus on GaN technology aligns with global trends toward energy efficiency, and Infineon is strategically positioned to lead these advancements. With their extensive portfolio and manufacturing expertise, they are set to deliver the performance and cost-effectiveness that customers require in a rapidly evolving market.

Infineon Technologies AG, a prominent manufacturer in the semiconductor space, is dedicated to driving digitalization and decarbonization across industries. With approximately 57,000 employees worldwide and a revenue of about €14.7 billion in the fiscal year ending September 30, 2025, Infineon’s influence in the semiconductor domain continues to expand. The company is publicly listed on the Frankfurt Stock Exchange under the ticker symbol IFX, and trades on the OTCQX International under the symbol IFNNY.

For further updates on Infineon and its initiatives in GaN technology and beyond, visit Infineon’s website.