#South Korea #Semiconductor #DB HiTek #Gan HEMT #Chungcheongbuk-do

DB HiTek's Groundbreaking Move in the Semiconductor Industry

DB HiTek, a prominent player among specialty foundries focusing on 8-inch wafers, has recently made headlines by announcing its progression to the final stages of developing a cutting-edge technology—the 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process. This bold step signifies not just an innovation for DB HiTek but a transformative leap in the realm of power semiconductors.

Embracing GaN Technology for Unmatched Performance

The introduction of GaN technology represents a substantial advancement over traditional silicon-based power devices. Unlike their silicon counterparts, GaN semiconductors excel in high-voltage, high-frequency, and high-temperature environments, showcasing superior performance and extraordinary power efficiency. The 650V E-Mode GaN HEMT is particularly noted for its rapid switching capabilities and outstanding operational steadiness. This makes it a perfect fit for several significant applications, including electric vehicle (EV) charging frameworks, power conversion systems in hyperscale data centers, and cutting-edge 5G network apparatus.

In a market that is still emerging for compound semiconductors, DB HiTek has been proactive in identifying both GaN and Silicon Carbide (SiC) technologies as key growth drivers. The company's strategic investments in developing these advanced processes go back to 2022. A spokesperson for DB HiTek highlighted, “Our global recognition for excellence in silicon-based power semiconductor technologies, evidenced by our pioneering work in 0.18µm BCDMOS processes, positions us ideally to incorporate GaN capabilities, enhancing our competitive edge.”

Future Pathway and Expansion Plans

Upon the successful rollout of its 650V GaN HEMT process, DB HiTek has ambitious plans for expansion, including the launch of a 200V GaN process and an optimized 650V process for Integrated Circuit (IC) integration by the end of 2026. The company is committed to extending its GaN platform across various voltage spectra to meet market demands and client specifications.

To support these initiatives, substantial development is underway at its cleanroom facilities located in Chungcheongbuk-do, South Korea. The expansion aims to increase production capacity, enabling the rapid output of around 35,000 additional 8-inch wafers per month, thereby facilitating the manufacture of GaN, BCDMOS, and SiC technologies. Upon completion, this expansion will elevate DB HiTek’s overall monthly wafer capacity by an impressive 23%—an increase from 154,000 to 190,000 wafers.

Engagement in Industry Forums

DB HiTek is poised to showcase its advancements at the International Conference on Silicon Carbide and Related Materials (ICSCRM 2025), scheduled to take place from September 15 to 18 at BEXCO in Busan. This prominent global forum will provide DB HiTek an opportunity to demonstrate its progress in SiC process development in conjunction with its GaN and BCDMOS technologies, fostering direct engagement with clients and industry thought leaders.

In conclusion, as DB HiTek moves forward with its innovative GaN HEMT technology, the company not only signifies its commitment to high-efficiency semiconductor solutions but also reaffirms its status as a leader in the evolving landscape of next-generation power electronics.