#United States #Morrisville #HexaTech #Aluminum Nitride #N-polar

HexaTech Unveils Optimized N-polar Aluminum Nitride Substrate

HexaTech, Inc., a pioneer in single crystal aluminum nitride (AlN) substrates, has launched a groundbreaking nitrogen face (N-polar) terminated AlN substrate. This new substrate is crucial for advancing power and radio frequency (RF) device technologies that require high-performance materials. The introduction is set to address the soaring demand for next-generation N-polar device development, which is expected to outperform traditional aluminum (Al-polar) surface epitaxial growth.

Performance Advantages of N-polar Substrates

Dr. Rafael Dalmau, a senior scientist at HexaTech, explains that electronic devices like high electron mobility transistors (HEMTs) benefit from N-polar AlN substrates. These substrates not only leverage the favorable characteristics of the underlying bulk AlN, such as high electrical resistivity and superior thermal conductivity but also incorporate the distinct advantages of N-polar heterostructures. This technological integration may lead to significant improvements in the maximum power gain cut-off frequency, ultimately enhancing device performance and efficiency.

The N-polar substrates are compact at a standard two-inch diameter and are available for immediate use with standard lead times. This novel N-polar process has been in development for over a year, indicating HexaTech's commitment to innovation and quality in the semiconductor materials industry.

Scalability and Future Prospects

Gregory Mills, Vice President of Business Development at HexaTech, highlighted that the new N-polar process is designed to be scalable in both diameter and volume. This scalability aligns with HexaTech's previously announced 100 mm expansion initiative, buoyed by support from the U.S. Department of Defense's DARPA UWBGS program. Such collaborations underscore HexaTech's strategic positioning within the technology landscape, where military and commercial sectors increasingly overlap in research and development.

Commitment to Excellence

HexaTech stands out as the world's leading supplier of PVT-grown AlN substrates, consistently pushing the envelope in advanced product capabilities. The company has a notable history of transforming complex material science challenges into commercially viable solutions, reflecting its continuous drive for innovation in the semiconductor market.

As HexaTech releases its new 2-inch N-polar AlN substrates, the company remains committed to meeting the needs of its global clientele. Interested parties can find further details about HexaTech and its advanced materials on their official website or by directly contacting their team.

A Brief Introduction to HexaTech

Founded in 2001 and a subsidiary of Tokyo-based Stanley Electric, HexaTech primarily specializes in the manufacture of single crystal AlN substrates. These substrates power applications such as long-life UV-C LEDs for disinfection, deep UV lasers for biological threat detection, high-voltage switching for efficient power conversion, and RF components crucial for satellite communications.

Stanley Electric is recognized for its cutting-edge optical technologies, contributing significantly to the automotive sector and beyond. By fully utilizing its manufacturing capabilities, Stanley Electric aims to explore the expansive possibilities of light and technology to enhance daily life.

In an era where technology is at the forefront of societal advancements, HexaTech’s dedicated efforts in advancing materials will no doubt play a pivotal role in shaping the future of power and RF devices.