#Japan #Tokyo #Automotive #Power Electronics #SiC/GaN Power

Seminar on SiC/GaN Power Devices

Organized by: CMC Research Inc.
Date: December 8, 2025
Time: 10:30 AM - 4:30 PM JST
Format: Live online via Zoom (includes materials)

Join us for an essential seminar discussing the technical trends and challenges surrounding SiC/GaN power devices tailored for next-generation automotive and data center applications. Led by Professor Noriyuki Iwamuro from Tsukuba University, this seminar will provide insights into the technical advancements that are revolutionizing power electronics.

Seminar Overview

The seminar will explore the key factors needed to enhance the market adoption of SiC/GaN power devices. As of 2024, significant progress has been made globally in the electrification of vehicles (xEV), with several nations aiming to ban the sale of new gasoline vehicles by the 2030s. Concurrently, the construction of data centers is accelerating worldwide, driven by the growing demand for AI and high-performance computing, leading to substantial power consumption.

Why Focus on SiC/GaN?
The transition to xEVs and the efficiency improvement of server power supplies hinge on the development of high-performance power devices. SiC/GaN devices hold promise as next-generation solutions, yet they face challenges in performance, reliability, and cost competitiveness against traditional silicon devices. This seminar aims to clarify the future outlook for SiC/GaN technology, addressing its strengths and weaknesses in the current market.

Key Benefits of Attending

• - Gain knowledge about the application of power devices in data centers and xEVs.
• - Understand the latest technical trends surrounding Si, SiC, and GaN devices and packaging technologies.
• - Learn about the unique design and process technologies pertinent to Si and SiC devices.

Target Audience

This seminar is especially relevant for professionals involved in:

• - Power Electronics Development
• - Power Device Development
• - Sales of Power Electronics Equipment and Devices

Program Outline

1. Introduction to Power Electronics
- What are power devices and their applications?
- The role of power electronics in modern technology.

2. Advancements in Silicon Power Devices
- Progress and challenges in MOSFET and IGBT technologies.
- Innovations driving performance improvements.

3. Current State and Challenges of SiC Power Devices
- Advantages of SiC as compared to silicon.
- Manufacturing and reliability challenges.

4. Status and Challenges of GaN Power Devices
- Structural features and performance challenges of GaN devices.
- Advancements in vertical GaN device technologies.

5. Implementing High-Temperature Technology
- Benefits of operating at high temperatures.
- Development of SiC-MOSFET modules.

Registration Fees

• - General: ¥55,000 (Tax included)
• - Newsletter Subscribers: ¥49,500 (Tax included)
• - Academic Price: ¥26,400 (Tax included)

How to Register

To register for the seminar, please visit the CMC Research website. Upon registration, you will receive a URL for viewing the seminar via email. For details, refer to the link below:

🔗 Register Here

Come join industry peers to enhance your understanding of power electronics and SI/GaN technologies required for the future of automotive and data center applications!